00047TD Search Results

Contextual Info: DS2257, DS2257S DALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR SO E D 2bl4130 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at lOjiAmaxat 00047TD

Contextual Info: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5116164B

Abstract: HY5116164BJC wx19
Contextual Info: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

7201U35

Contextual Info: N J C -M O S 3-TERMINAL POSITIVE U 7 VOLTAGE GENERAL DESCRIPTION The NJU7201 series is a C-MOS 3-terminal positive volt­ age regulator which contains internal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.

7201U55

Abstract: 7201L30 7201l15 7201U30 7201L55 7201U35 7201L32 7201L25 7201L40 F131
Contextual Info: IS! vJ L J 7 C-M O S 3-TERMINAL POSITIVE VOLTAGE GENERAL DESCRIPTION The NJU7201 series is a C-MOS 3-terminal positive volt­ age regulator which contains internal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.