000315B Search Results

1S697

Abstract: BP107 FT2500CL FT2500CL-12 T-25
Contextual Info: POüJEREX m INC W 05 De | T S T M b S l 000315b E R E X 3 J~~~ *T"— ^ ï T - a i FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR

thyristors 5000 volt 3000 amperes

Abstract: thyristors 5000 volt 2000 amperes
Contextual Info: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR

BP107

Abstract: FT2500CL FT2500CL-12 T-25
Contextual Info: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR

Magnetoresistance and sensor

Abstract: DM-230
Contextual Info: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

As15u

Abstract: AS15-U 15A10 las15u
Contextual Info: SEMTECH CORP SñE D IH ñlB'ilB11! 0 0 0 3 1 5 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown

68230

Abstract: parallel/transistor 68230 TS68230MC 68230 A 2a23j 68000 thomson
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68230 HMOS HIGH DENSITY N-CHANNEL SILICON-GATE PARALLEL INTERFACE / TIMER DESCRIPTION The TS 68230 parallel interface/timer Pl/T provides versati­ le double buffered parallel interfaces and a system oriented

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - F A P - I I I • Features S E R I E S Outline Drawings • High current • Low on-resistance

Contextual Info: F U J I T S U M I C R O E L E C T R O N I C S 7fl D E | 3 7 ^ 7 k . a 000314ft ft | j - t f C '7 .3 ‘ 1 * Prelim inary FU JITSU M OS M em o ries M B85214-12, M B85214-15 MOS 262,144 X 8-Bit Dynamic Random Access Memory Module Description The Fujitsu MB85214 is a fully decoded, 262,144 word x 8-bit

Las series current regulators

Abstract: 5 Amp Positive Adjustable Regulators 15A20 LAS15A05 LAS1515 las1505 LAS1512 LAS1524 las15u
Contextual Info: S E M T E C H CORP SñE D IH ñlB'ilB11! 00 03 15 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts

V25P

Abstract: V10P V59N V25N v24n 00D05 v29n v63n v59p
Contextual Info: S-MOS S Y S T E M S A Seiko Epson Affiliate October 1996 240-OUTPUT TFT SOURCE DRIVER DESCRIPTION The SED1902 is a source driver IC for 64-level 256 color display TFT-LCDs. The digital data input is 6 bits by 2 pixels (where a pixel is defined as 3 dots: R, G, B). Using its 6-bit D/A converter and

019S

Abstract: HDAC10180 RS-343-A SPT1018 SPT1018B TDC1018
Contextual Info: @ SPT S P T 1 1 8 8-BIT, HIGH SPEED D/A CONVERTER SIGNAL PROCESSINO TECHNOLOGIES FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with TDC1018 and HDAC10180 with Improved Performance • RS-343-A Compatible

Contextual Info: 2SK2098-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES Outline Drawings • F e a tu re s • High current • Low on-resistance • No secondary breakdown • Low driving power

52C8128

Abstract: V52C8128
Contextual Info: M O SEL V tT E U C V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ ) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)

cs40

Abstract: JT23
Contextual Info: HY5117800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

A63 A

Abstract: SCV64
Contextual Info: Openbus Interface Components - Universe User Manual 2 Functional Description 2.1 Architectural Overview This section introduces the general architecture of the Universe. This description makes frequent reference to the functional block diagram provided in Figure 2.1 on page 2-2. Notice