0002G Search Results

HYM536100M

Contextual Info: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted

laf 0001 ic Substitution

Abstract: gs 3935 car central lock Car Central lock system circuit diagram of car central lock system 80386 microprocessor pin out diagram CD1400 CTSR LA 7804 OA CL-CD1400
Contextual Info: C I RR US LO GI C INC SlBfcikiB'i ODDlll* *J • CIR CL-CDUOO 'CIRRUS LOGIC Preliminary D ata Sheet T-7T-37-OS" FEATURES Four-channel Serial/Parallel Communications Engine with UNIX Character Processing Asynchronous Features ■ Software-programmable serial data rates up to

Contextual Info: FEATURES J W • 1010 - 1110 MHz ■ Constant Insertion Loss MODEL NO. DP0891 ■ 31 nSec Switching Speed GaAs 5 Section Phase Shifter ■ TTL Control ■ 38 Pin DIP 5 BIT RF IN/OUT G N D ' GND RF OUT/IN ¿ m m î m î î m in 1 +5V 2 3 GND GND 4 5 6 7 8 9

TLCS-90

Abstract: 0P-61F "PWM Controllers" UC 3842 FMN5 lear layout of 4 channel 315 rf transmitter TMP91C820AF tlp 748 ah202f ay- 8500 system philips semiconductor data handbook
Contextual Info: Data Book 16bit Micro controller TLCS-900/L1 series TMP91C820AF Rev. 2.5 07/December/2001 contents - Contents -TLCS-900/L1 LSI DEVICES TMP91C820AF 1. 2. Outline and Device Characteristics Pin Assignment and Pin Functions 2.1 Pin Assignment Diagram

Contextual Info: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module

F400

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties pro Baustein / per module 0,03 °C/W Maximum rated values VcES 1200 V 400 A

m 7106

Abstract: R1019
Contextual Info: VITESSE VSC7105/7106 Data Sheet 1.0625 Gbit/sec Transmitter/Receiver Chipset for Fibre Channel or Proprietary Serial Links • ANSI X3T11 Fibre Channel Compatible at 1.0625 Gbit/s • On-chip Fully Monolithic Clock Recovery and Clock Multiplication Circuits Require

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W

Contextual Info: Data Book 16bit Micro controller TLCS-900/L1 series TMP91C815F REV3.7 Dec 18, 2000 Rev. 3.7 18/DEC/2000 contents Table of Contents Chapter 4 TLCS-900/L1 Devices TMP91C815F 1. 2. OUTLINE AND DEVICE CHARACTERISTICS PIN ASSIGNMENT AND PIN FUNCTIONS 2.1 Pin Assignment Diagram

FD25

Abstract: AP-FD25A20A0001GR Apacer
Contextual Info: ATA Flash Drive Ⅲ AP-FD25A20AxxxxxR-XX RoHS Compliant ATA Flash Drive Ⅲ Specification for AFDⅢ 253 May 9, 2008 Apacer Technology Inc. 9/F, No. 100, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan Tel: +886-2-2696-1666 Fax: +886-2-2696-1668 www.apacer.com

PJ7D

Abstract: pj6d pj3d pj4d diagrama lg lcd 22 block diagram representing the transmission and reciving rx 3152 27Mhz tranceiver of 6 channel datasheet RTX 433 11-pin pager board
Contextual Info: Data Book 32bit Micro controller TLCS-900/H1 series TMP92CH21FG TENTATIVE Rev0.92 11th/Jul./2002 Since this Revision 0.92 is still under working, there may be some mistakes in it. When you will start to design, please order the latest one. - Contents-1.

Contextual Info: FEATU RES MODEL NO. DA0923-10 • 1 0 - 1000 MHz ■ 0 .1 m A ,+5 VDC ■ ± 0.1 dB Accuracy GaAs 1 Section Attenuator ■ Constant Phase 1 BIT ■ Medium Power ■ TTL Control ■ TO-8 Package ■ See 100C 1711 -10 For Connectorized Version £ ~ RF « r "

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,057 RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 600 A RthCK VcES le c/w pro Baustein / per module

Contextual Info: FZ 600 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces ¡c 1200 V 6 00 A Thermal properties RfhJC DC, pro Baustein / per module RlthCK pro Baustein / per module

Contextual Info: a WHITE /M IC R O E L E C T R O N IC S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 1 5 , 1 7 , 2 0 , 25 n s ■ Pa ckaging 2 V Data Retention D e vice s A vailab le ■ TTL C om patible Inputs and Outputs Low Pow er Version

F25P09QS

Abstract: F25P10QS
Contextual Info: 27.7A/90— 100V SCHOTTKY BARRIER DIODE F25P09QS F25P10QS FEA TURES ° Similar to T0-220AB Case, Fully Molded Isolation • Dual Diodes - Cathode Common 0 Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 100 Volts Types Available

gtx 970

Contextual Info: m rA LOW-POWER 5.0 VOLT SINGLE-CHIP READ CHANNEL for DISK DRIVES User Manual y Preliminary Product Information IMP 1995 62463MC 8-03-95 Page 1 of 56 LOW-POWER 5.0 VOLT SINGLE-CHIP READ CHANNEL for DISK DRIVES EVÍP62C548 Table of Contents 1.0 Nomenclature

632565

Abstract: 7801301 CTS0002
Contextual Info: Buffer Amplifier 0002GB G eneral Description DESC 7801301 7801301 7801301 7801301 T he C T S 0 0 0 2 G B B u ffe r A m p lifie r is a h ig h speed, high im p e d a n c e fo llo w e r used w ith o p e ra tio n a l a m p lifie rs to increa se the c u rr e n t o u tp u t drive.

Contextual Info: ICS1884 Integrated I] 11UPFF11 J CirCUÎt ILLm UT 3 Systems, Inc. SONET/ATM Teleclock Recovery/Generator Unit General Description Features The ICS1884 Teleclock is designed to provide high perform­ ance clock recovery and generation for either 51.84 Mbit/s

DFMC

Contextual Info: Data Book 16bit Micro controller TLCS-900/L1 series TMP91C025F Under Development REV3.2 September. 10, 2001 Rev. 3.2 10/September/2001 contents Table of Contents TLCS-900/L1 Devices TMP91C025F 1. OUTLINE AND DEVICE CHARACTERISTICS 2. PIN ASSIGNMENT AND PIN FUNCTIONS

D452

Contextual Info: 123456789A  !C"!#$C 123456278912 34526789ABCD6972672 D46E2 F9B57D26E2 A96F5F2 6729775D69726D4 26B52 A9FDE292657E52 5A5EE2 9A26B65F2 2

Contextual Info: IB M 1 1 D 1 3 2 0 L IB M 1 1 E 1 3 2 0 L IB M 1 1 D 2 3 2 0 L IB M 1 1 E 2 3 2 0 L 1M/2M x 32 DRAM Module Features • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only, CBR and Hidden Refresh

Contextual Info: •HYUNDAI HYM532200 Series SEMICONDUCTOR 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B