000234B Search Results

486 motherboard schematic

Abstract: 486dx2 pinouts 486DX2 486dx schematic 4021-A TL05A Super386 t187 T106B J7 CHIPS TECHNOLOGIES
Contextual Info: CHIPS & TECHNOLOGIES INC SIE D • SO Töllb DDOSSba 4ÖT M C H P 9000-380 8 CHIPS CHIPS & TECHNOLOGIES INC S1E » ■ EQTflllb □□□PPbM 31S MCHP T -v 1 -1 7 -0 1 Copyright Notice Software Copyright 1992, Chips and Technologies, Inc. Manual Copyright © 1992, Chips and Technologies, Inc.

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: Ultra Bright LED Lamps: Type 2 Weight: 1.0 g Unit: mm AND190AYP InGaAlP Yellow Light Emission T-3 Package 10 mm Features • • • • • • • • New emission material (InGaAlP) yellow LED Peak wavelength ( I p = 590 nm) high bright emission All plastic mold type, clear colorless lens

PT1301

Abstract: tca 780 ez 948 MARKING CODE 21L GR-253-CORE PM5355 LT ABN pT-1301
Contextual Info: PM S TANDARD PRODUCT PMC-Sierra, Inc. ISSUE 2 PM5355 S/UNI-622 SATURN USER NETWORK INTERFACE 622 Mbit/s FEA TU R ES • Monolithic Saturn User Network Interface that implements the ATM physical layer for Broadband ISDN according to CCITT Recommendation 1.432 and the ATM

EL2424CJ

Abstract: EL2424CN EL2424J el2424 M2424
Contextual Info: 53E J> m 312T557 000B34M Tbb HELA h ig h p e r f o r m a n c e a n a j k te c im r a u r c c ir c u it s EL2424/EL2424C Quad 60 MHz High Speed Operational Amplifier i ELANTECINC Features • • • • Unity-gain stable Wide bandwidth—60 MHz High slew rate—200 V//xs

thyristor code

Abstract: R400CH 60598-1 10KHZ R180CHX R185CHX R190CHX R200CHX R210CHX R216CHX
Contextual Info: WESTCODE SEMICONDUCTORS 3TE ] Westcode “D ” and “ R ” series of fast-switching thyristors have a regenerative interdigitated gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values, combined with the