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Ba 33 bco

Contextual Info: NN5216 4 0 5 / NN5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words

Contextual Info: ^EDI _ EDI8F8259C Electronic Designs Inc. Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: Illl = ^ i Illl 2N3209CSM SEME LAB HIGH SPEED, PNR SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ±0.10 t (0.02 ± 0.004) H 0.31 (0.012)