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00-P0 Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMTQ100P03A
|
Jiangsu JieJie Microelectronics Co Ltd | P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -40A continuous drain current, and RDS(on) less than 9.4mΩ at VGS=-10V, available in PDFN3x3-8L package. | Original | ||||
HSH100P06
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Huashuo Semiconductor | HSH100P06 is a P-channel 60V trench MOSFET with 5.5 mΩ RDS(ON) at -10V VGS, 100A continuous drain current, low gate charge, and fast switching for synchronous buck converters. | Original | ||||
JMTV200P03A
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Jiangsu JieJie Microelectronics Co Ltd | P-channel Enhancement Mode Power MOSFET JMTV200P03A in DFN2020-6L package, -30V drain-source voltage, -11A continuous drain current, RDS(ON) less than 17.7mΩ at VGS -10V, lead-free and 100% UIS tested. | Original | ||||
CJAC100P03
|
JCET Group | P-Channel Power MOSFET CJAC100P03 with -30V drain-source voltage, -100A continuous drain current, 2.3mΩ RDS(on) at -10V VGS, and low gate charge in a PDFN 5x6-8L package for high-density switching applications. | Original | ||||
JMTQ200P03A
|
Jiangsu JieJie Microelectronics Co Ltd | P-channel Enhancement Mode Power MOSFET JMTQ200P03A with -30V drain-source voltage, -12A continuous drain current, and RDS(ON) less than 17.4mΩ at VGS = -10V, housed in a PDFN3x3-8L package. | Original | ||||
HSP100P06
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Huashuo Semiconductor | P-Ch 60V Fast Switching MOSFET with -100A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 210W power dissipation in TO-220 package. | Original | ||||
JMTG100P03A
|
Jiangsu JieJie Microelectronics Co Ltd | P-channel enhancement mode power MOSFET with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 9.5mΩ at VGS=-10V, housed in a PDFN5x6-8L package. | Original | ||||
JMTK100P03A
|
Jiangsu JieJie Microelectronics Co Ltd | P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -55A continuous drain current, RDS(on) less than 10mΩ at VGS = -10V, and low gate charge, suitable for power management and load switch applications. | Original | ||||
HSU100P04
|
Huashuo Semiconductor | HSU 100P04 is a P-channel 40V trench MOSFET with 5.8 mOhm RDS(on), 100A continuous drain current, low gate charge, and 1.8 C/W junction-to-case thermal resistance, suitable for synchronous buck converters. | Original | ||||
HSBA100P03
|
Huashuo Semiconductor | P-Ch 30V MOSFET with -100A continuous drain current, 2.6mΩ RDS(ON), low gate charge, and 140W power dissipation in a PRPAK5x6 package. | Original | ||||
HSBA100P04
|
Huashuo Semiconductor | HSBA100P04 is a P-channel 40V MOSFET with 5.8 mΩ RDS(ON), 100A continuous drain current, and low gate charge, suitable for synchronous buck converters using advanced trench technology in a PRPAK5x6 package. | Original | ||||
HSU100P03
|
Huashuo Semiconductor | P-Ch 30V Fast Switching MOSFET with -100A continuous drain current, 4mΩ RDS(ON), low gate charge, TO252 package, suitable for synchronous buck converters. | Original |
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Aces Electronics Co Ltd 51495-0400P-0020.4MM PITCH 40 POSITION WIRE TO |
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Kyocera AVX Components CX3225GA30000P0HPSCC3.2MM X 2.5MM CRYSTAL 30MHZ 18PF |
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Kyocera AVX Components CX3225GB40000P0HPQHH3.2MM X 2.5MM CRYSTAL 40MHZ 18PF |
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CX3225GB40000P0HPQHH | Digi-Reel | 2,768 | 1 |
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Cree, Inc. XQEAWT-00-0000-P0000U9E7XLAMP XQ-E WHITE LIGHT EMITTING |
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XQEAWT-00-0000-P0000U9E7 | Tape & Reel | 2,000 | 2,000 |
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Same Sky TB003V-500-P03BETERMINAL BLOCK, SCREW TYPE, 5.00 |
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TB003V-500-P03BE | Bag | 1,932 | 1 |
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TB003V-500-P03BE | 2,000 |
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