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00-P0 Datasheets (12)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
JMTQ100P03A		Jiangsu JieJie Microelectronics Co Ltd	P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -40A continuous drain current, and RDS(on) less than 9.4mΩ at VGS=-10V, available in PDFN3x3-8L package.	Original	PDF
JMTV200P03A		Jiangsu JieJie Microelectronics Co Ltd	P-channel Enhancement Mode Power MOSFET JMTV200P03A in DFN2020-6L package, -30V drain-source voltage, -11A continuous drain current, RDS(ON) less than 17.7mΩ at VGS -10V, lead-free and 100% UIS tested.	Original	PDF
HSH100P06		Huashuo Semiconductor	HSH100P06 is a P-channel 60V trench MOSFET with 5.5 mΩ RDS(ON) at -10V VGS, 100A continuous drain current, low gate charge, and fast switching for synchronous buck converters.	Original	PDF
HSU100P04		Huashuo Semiconductor	HSU 100P04 is a P-channel 40V trench MOSFET with 5.8 mOhm RDS(on), 100A continuous drain current, low gate charge, and 1.8 C/W junction-to-case thermal resistance, suitable for synchronous buck converters.	Original	PDF
HSBA100P03		Huashuo Semiconductor	P-Ch 30V MOSFET with -100A continuous drain current, 2.6mΩ RDS(ON), low gate charge, and 140W power dissipation in a PRPAK5x6 package.	Original	PDF
HSU100P03		Huashuo Semiconductor	P-Ch 30V Fast Switching MOSFET with -100A continuous drain current, 4mΩ RDS(ON), low gate charge, TO252 package, suitable for synchronous buck converters.	Original	PDF
HSBA100P04		Huashuo Semiconductor	HSBA100P04 is a P-channel 40V MOSFET with 5.8 mΩ RDS(ON), 100A continuous drain current, and low gate charge, suitable for synchronous buck converters using advanced trench technology in a PRPAK5x6 package.	Original	PDF
CJAC100P03		JCET Group	P-Channel Power MOSFET CJAC100P03 with -30V drain-source voltage, -100A continuous drain current, 2.3mΩ RDS(on) at -10V VGS, and low gate charge in a PDFN 5x6-8L package for high-density switching applications.	Original	PDF
JMTQ200P03A		Jiangsu JieJie Microelectronics Co Ltd	P-channel Enhancement Mode Power MOSFET JMTQ200P03A with -30V drain-source voltage, -12A continuous drain current, and RDS(ON) less than 17.4mΩ at VGS = -10V, housed in a PDFN3x3-8L package.	Original	PDF
JMTG100P03A		Jiangsu JieJie Microelectronics Co Ltd	P-channel enhancement mode power MOSFET with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 9.5mΩ at VGS=-10V, housed in a PDFN5x6-8L package.	Original	PDF
HSP100P06		Huashuo Semiconductor	P-Ch 60V Fast Switching MOSFET with -100A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 210W power dissipation in TO-220 package.	Original	PDF
JMTK100P03A		Jiangsu JieJie Microelectronics Co Ltd	P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -55A continuous drain current, RDS(on) less than 10mΩ at VGS = -10V, and low gate charge, suitable for power management and load switch applications.	Original	PDF

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Cree, Inc. XQEAWT-00-0000-P0000U9E7 XLAMP XQ-E WHITE LIGHT EMITTING
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ALFA'R B-920934H000P02 CONN. MC BASE WITH COUPLING NUT
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ALFA'R B-920937Y000P02 CONN. MC BASE WITH COUPLING NUT
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Amphenol Cables on Demand Q-0300P0005012I COAX CBL BNC TO HD-BNC 12"
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