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009A
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Essentra Components
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TAPERED CAP - OD RANGE: 9.1 - 10 |
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AK6009AS
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK6009AS with 60V drain-source voltage, 9A continuous drain current, 16mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and load switch applications. |
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NCE6009AS
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NCEPOWER
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NCE6009AS is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 11mΩ typical at 10V gate-source voltage, suitable for power switching and load switch applications. |
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PBU-1009A-R15T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra-low DCR, and RoHS compliance. |
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JMSL1009AK
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-Ch Power MOSFET in TO-252-3L package with 7.8 mΩ typical RDS(ON) at VGS = 10V, 78 A continuous drain current, low gate charge, and designed for power management, motor driving, and switching applications. |
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PBU-1009A-R12T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra-low DCR, and RoHS compliance. |
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AK6009AS
