00-6A Search Results
00-6A Datasheets (11)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 006A | Essentra Components | TAPERED CAP - OD RANGE: 6.7 - 8. | Original | 4.78MB | |||
SM4006A
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SUNMATE electronic Co., LTD | Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications. | Original | ||||
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JECR1006AL
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Jiangsu JieJie Microelectronics Co Ltd | EPI hyperfast soft recovery rectifier in TO-220A-2L package with 600V maximum repetitive peak reverse voltage, 10A average forward current, low reverse leakage, and 2500V RMS isolation voltage. | Original | ||||
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JEER3006AL
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Jiangsu JieJie Microelectronics Co Ltd | Superfast recovery rectifier in TO-220A-2L package with 600V repetitive peak reverse voltage, 30A average forward current, low forward voltage, fast recovery time, and 2500V RMS isolation voltage for high-frequency switch-mode power supplies and PFC applications. | Original | ||||
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JMTK4006A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET JMTK4006A with 40V drain-source voltage, 70A continuous drain current, RDS(ON) less than 5.9mΩ at VGS = 10V, and low gate charge, suitable for power management and load switching applications. | Original | ||||
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JECR2006AL
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Jiangsu JieJie Microelectronics Co Ltd | 20A average forward current, 600V maximum repetitive peak reverse voltage, hyperfast soft recovery rectifier in TO-220A-2L package with low reverse leakage and 2.1g weight. | Original | ||||
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CL4006A30L6M
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ChipLink Tech | Linear charging management IC with integrated 200mA LDO in SOT23-6L package, featuring 4.24V float charge voltage, up to 500mA programmable charging current, and 2uA standby current. | Original | ||||
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JMSH1006AK
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 5.5 mΩ RDS(ON) at 10V VGS, 90A continuous drain current, low gate charge, and 1.9 ohm typical gate resistance, suitable for power management and motor drive applications. | Original | ||||
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JMTK2006A
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Jiangsu JieJie Microelectronics Co Ltd | 20V, 60A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) < 6.2mΩ at VGS = 4.5V, advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
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JMSL1006AK
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 5.4 mΩ typical RDS(ON) at VGS = 10V, 99A continuous drain current, low gate charge, and designed for power management, motor driving, and switching applications. | Original | ||||
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JECR3006AL
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Jiangsu JieJie Microelectronics Co Ltd | Hyperfast soft recovery rectifier in TO-220A-2L package with 600V repetitive peak reverse voltage, 30A average forward current, low forward voltage, and 2500V RMS isolation voltage for high-frequency switched-mode power supplies. | Original |
00-6A Price and Stock
E-T-A
E-T-A 1658-A00-00-P10-6AMIN ORD QTY 250. VERY COST |
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E-T-A 1658-F01-00-P13-6AMIN ORD QTY 250. VERY COST |
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E-T-A 1658-F01-00-P10-6AMIN ORD QTY 250. VERY COST |
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E-T-A 1658-G21-00-P13-6AMIN ORD QTY 250. VERY COST |
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1658-G21-00-P13-6A |
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E-T-A 1658-G21-00-P10-6AMIN ORD QTY 250. VERY COST |
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1658-G21-00-P10-6A |
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