AK80T900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 900 mΩ maximum RDS(ON), 6 A continuous drain current, low gate charge, and TO-252 or TO-251 package options. |
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AK70N100I
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AK Semiconductor
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AK70N100I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V gate-source voltage. |
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AK60R900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 900 mΩ on-resistance, 5 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. |
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JST100IS-1200BW
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Jiangsu JieJie Microelectronics Co Ltd
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100A TRIAC with 1200V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation, ITO-247 insulated package, and 2500 VRMS rated insulation. |
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AK70R900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 700 V drain-source voltage, 5 A continuous drain current, 840 mΩ typical on-resistance, and low gate charge for high-efficiency power conversion applications. |
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NCE70N100I
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NCEPOWER
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NCE70N100I is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE70T900I
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NCEPOWER
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NCE70T900I and NCE70T900K are 700V N-channel super junction power MOSFETs with low on-resistance of 820 mΩ typical, 5A continuous drain current, and ultra-low gate charge, available in TO-251 and TO-252 packages. |
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JST100IS-1600BW
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Jiangsu JieJie Microelectronics Co Ltd
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100A RMS, 1600V repetitive peak off-state voltage triac in ITO-247 package, suitable for AC switching applications including phase control, motor speed control, and heating regulation, with insulation rated at 2500 VRMS. |
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AK65T900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 750 mΩ typical on-resistance, 5 A continuous drain current, and low gate charge for high-efficiency power conversion applications. |
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NCE65T900I
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NCEPOWER
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NCE65T900I and NCE65T900K are N-channel super junction power MOSFETs with 650 V drain-source voltage, 5 A continuous drain current, 750 mΩ typical RDS(ON), low gate charge, and TO-251/TO-252 package options. |
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AK70T900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 700 V VDS, 5 A continuous drain current, 820 mΩ typical RDS(ON), ultra-low gate charge, and TO-251 or TO-252 package options. |
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AK65R900I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 900 mΩ on-resistance, 5 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. |
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AK80T900I
