0.18-UM CMOS TECHNOLOGY LENGTH AND WIDTH Search Results

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

mlc nand flash lsb msb

Abstract: ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD
Contextual Info: S1C33A01 CMOS 32-bit Application Specific Controller z z z z z z z z z z z z z z z 32-bit RISC CPU Core EPSON S1C33 PE core (Max. 90 MHz operation) 1KB Instruction Cache and 1KB Data Cache 100KB RAM (including cache and battery backup RAM) Programmable Operating Clock using PLL

XH018

Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
Contextual Info: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

iso7816 USB

Abstract: seiko 320 240 DA16 ISO7816 ISO7816-3
Contextual Info: S1C33E07 CMOS 32-bit Application Specific Controller 32-bit RISC CPU-Core Optimized for SoC EPSON S1C33 PE Built-in 8KB RAM SDRAM Controller with Burst Control Generic DMA Controller (HSDMA/IDMA) 6-ch. PWM Control Timer/Counter Supports Several Interfaces

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

s1c33l26

Abstract: Picture-in-Picture IC seiko 320 240 color space look-up table
Contextual Info: S1C33L26 CMOS 32-bit Application Specific Controller ● 32-bit RISC CPU core Epson S1C33 PE core (Max. 60 MHz operation) ●34KB RAM (including cache and VRAM) ● Programmable operating clock using PLL (Division ratio: 1/1～1/10, Multiplication ratio: x1～x16)

S3C2412

Abstract: uart protocol touch screen S3C2410A Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo
Contextual Info: Product Technical Brief S3C2412 Rev 2.2, Apr. 2006 Overview SAMSUNG's S3C2412 is a Derivative product of S3C2410A. S3C2412 is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

130 nm CMOS standard cell library

Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Contextual Info: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS

MOB4 nxp

Contextual Info: P5Cx009/P5Cx072 Secure triple, dual and contact PKI smart card controller Rev. 01 — 5 February 2010 181610 Product short data sheet PUBLIC 1. General description 1.1 SmartMX CMOS18 features The CMOS18 SmartMX family members are a modular set of devices featuring:

P5CC072

Abstract: P5CD072 P5CC072 SOT266-1 P5CD009 P5CT072 Iso 7816 Flash 72 kb Eeprom 72 kb iso 7816-12 MIFARE Classic Key Diversification mifare-1 MOB4 package
Contextual Info: P5Cx009/P5Cx072 Secure triple, dual and contact PKI smart card controller Rev. 01 — 5 February 2010 181610 Product short data sheet PUBLIC 1. General description 1.1 SmartMX CMOS18 features The CMOS18 SmartMX family members are a modular set of devices featuring:

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

TUNABLE VCO 10GHZ

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
Contextual Info: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a

iso7816 class c

Abstract: vga Picture-in-Picture Processor seiko 320 240 ISO7816 ISO7816-3 mlc nand flash lsb msb
Contextual Info: S1C33L15 CMOS 32-bit Application Specific Controller ● 32-bit RISC CPU-Core Optimized for SoC EPSON S1C33 PE (Max. 90 MHz operation) ● 1KB Instruction Cache and 1KB Data Cache ● 100KB RAM (including cache and battery backup RAM) ● Programmable Operating Clock using PLL

PT6042

Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Contextual Info: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS

seiko 320 240

Abstract: YUV420 64K-color S1C33L19 YUV444 QVGA LCD Monochrome Sharp Color TFT LCD Module cpu interface YUV411 "saturation processing" S1C33L17
Contextual Info: S1C33L19 CMOS 32-bit Application Specific Controller ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 32-bit RISC CPU-Core Optimized for SoC EPSON S1C33 PE Dual AMBA Bus System for CPU and LCDC Built-in PLL (Multiplication rate: x1 to ×16) Advanced CPU Instruction Queue Buffer

lm 7803

Abstract: BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM
Contextual Info: Gate current: Modeling, AL extraction and impact on RF performance R. van Langevelde, A.J. Schölten, R. Duffy*, F.N. Cubaynes*, M.J. Knitel and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742418; Fax: +31-40-2744113; E-mail: ronald.van.langevelde@philips.com

93LC56BX

Contextual Info: M ic r o c h ip 93LC56A/B 2K 2.5V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 standby current (maximum) 256 x 8 bit organization (93LC56A)

SOIC Package 8-Pin Surface Mount 601

Contextual Info: 93LC66A/B M ic r o c h ip 4K 2.5 V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 standby current (maximum) 512 x 8 bit organization (93LC66A)

Contextual Info: Data Sheet July 1996 mi c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations T7501 PCM Codec with Filters Features • Pin-selectable transmit and receive gain control ■ Pin-selectable |i-law or A-law operation ■ Latch-up free CMOS technology

8 bit wallace tree multiplier verilog code

Abstract: 16 bit wallace tree multiplier verilog code 24 bit wallace tree multiplier verilog code vhdl code for Wallace tree multiplier 8 bit multiplication vhdl code using wallace tree 4 bit multiplication vhdl code using wallace tree vhdl code Wallace tree multiplier 32 bit wallace tree multiplier verilog code LSI Logic EPBGA 4 bit wallace tree multiplier verilog code
Contextual Info: LSI LOGIC Process Overview 0.6-Micron, 5-Volt LCB605K ASIC Products Datasheet LSI Logic’s LCB605K cell-based ASICs provide a very dense, cost-effective solution that is ideal for 5-volt system integration. Based on LSI Logic’s 0.45-micron effective channel length

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

AN792

Abstract: C281 G42-88 TC1016 MARKING GA
Contextual Info: TC1016 M i c r o c h ip 8OmA, Tiny CMOS LDO With Shutdown Features General Description • S pa ce-S a ving 5-P in SC -70 P ackage T he T C 10 16 is a high a ccu ra cy typica lly ±0 .5 % C M O S up gra de fo r b ip o la r low d ro p o u t regulators. It is