0.18 UM CMOS PROCESS Search Results

PCN0514

Abstract: epcs16n EPCS64N EPCS1SI8N marking EPCS4SI8N altera epcs16n 7B223 EPCS64SI16N marking code V5 z213x
Contextual Info: PROCESS CHANGE NOTIFICATION PCN0514 REV 2 MANUFACTURING CHANGES ON EPCS FAMILY Change Description: This is a revision to PCN0514, which was released in September 2005. The serial configuration device family will undergo manufacturing changes relating to process geometry and adding fabrication and assembly sites, as

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

71V3558

Abstract: 71V2557
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0105-01 DATE: 5/14/01 Product Affected: ZBT Product Family - Refer to attached list of part #'s. Manufacturing Location Affected: N/A

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

0.18 um CMOS Spiral Inductor technology

Abstract: TSMC+rf+cmos+0.18+um
Contextual Info: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •

ARM1136J-S

Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific

71016s

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:

servo track

Abstract: hdd dsp SD5210 176pin
Contextual Info: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s

MAX77100

Abstract: IC74 IC-74
Contextual Info: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76

XH018

Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
Contextual Info: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.

blood pressure circuit schematic

Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
Contextual Info: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:

philips tea 1090

Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

MIC427AJ

Abstract: tl494 "analog devices" tl494 dc to ac ic428
Contextual Info: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL7 CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

TSMC 0.35Um

Abstract: TSMC 1P4M HP83K cmos tsmc 0.18 tsmc FAB10 FAB-10 tsmc cmos 0.35 PI7C8150B PI7C8150A PI7C8152A
Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 06-04 Date Issued: June 30, 2006 Product(s) Affected: PI7C8150A, 8150A-33, 8150B, 8150B-33, PI7C8152A, 8152B Manufacturing Location Affected: TSMC Fab 7 and 10

TTL 74ls20

Contextual Info: SANYO SEMICONDUCTOR CORP b3E D • 7 cH 7 D 7 b 0011174 7 cìb W T S A J Ordering number: EN3910 MLC74HC20 No.3910 CMOS High-Speed Standard Logic Dual 4-Input NAND Gate F e a tu re s • The MLC74HC20 consists of 2 identical 4-input NAND gates. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS • TTL 74LS20

EN3911

Contextual Info: SANYO S E M I C O N D U CT O R CORP b3E D • 7TT7a7b GQ11177 HTS * T S A J Ordering number:EN3911_ I MLC74HC20M CMOS High-Speed Standard Logic Dual 4-Input NAND Gate F e a tu re s • The MLC74HC20M consists of 2 identical 4-input NAND gates. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS ■TTL 74LS20

OmniVision CMOS Camera Module

Abstract: Sccb interface 400x400 SCCB OV6680 CMOS sensor omnivision LCD 2.2 QCIF QCIF 60 fps
Contextual Info: OV6680 SGA product brief available in a lead-free package optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones The OV6680 is a single-chip, high-performance SquareGA SGA™ resolution (400x400) CameraChip™

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

Contextual Info: STORAGE INTERFACE The MSP2202 has a low cost, 32-bit ARM9-class RISC processor running up to 175 MHz, delivering over 200+ MIPS processing power. Combined with PMC-Sierra's advanced network storage software, the MSP2202-based solution provides: MEMORY CONTROLLER

MSP2200

Abstract: MSP2202
Contextual Info: STORAGE INTERFACE The MSP2202 has a low cost, 32-bit ARM9-class RISC processor running up to 175 MHz, delivering over 200+ MIPS processing power. Combined with PMC-Sierra's advanced network storage software, the MSP2202-based solution provides: MEMORY CONTROLLER

Contextual Info: v m VOLTAGE DETECTOR WITH OUTPUT DELAY m RN5VD SERIES •OUTLINE The RN5VD Series are voltage detector ICs with output delay functions and high detector threshold accuracy and ultra-low supply current by CMOS process, which can be operated at an extremely low volt­

XC6SLX45t-fgg484

Abstract: XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow
Contextual Info: Device Reliability Report Third Quarter 2010 UG116 v5.11 November 1, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the