0.13 BSIM3V3 Search Results

0.13 BSIM3V3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
0.13 bsim3v3 Abstract: 2SK3820 Contextual Info: 2SK3820 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.40 NLX 4.70E-07 DVT2 -0.01 UB 3.50E-21 AGS -1.00 RDSW 4.23E+04 WINT NFACTOR 0.80 CDSCD PCLM 0.30 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 6.00E-12 CGDL 2.20E-10	Original	2SK3820 70E-07 50E-21 00E-12 20E-10 0E-09 00E-07 3290184E-6 3290184E-12 07E-05 0.13 bsim3v3 2SK3820	PDF
bsim3 Abstract: MCH6320 0.13 bsim3v3 Contextual Info: MCH6320 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.8 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.04 RDSW 1.9E+03 WINT NFACTOR 0.7 CDSCD PCLM 2.8 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 5.0E-11 CGDL 6.0E-10 CLC	Original	MCH6320 2E-07 0E-21 0E-11 0E-10 0E-09 0E-08 578202E-6 578202E-12 0E-03 bsim3 MCH6320 0.13 bsim3v3	PDF
2SK370* spice Abstract: 0.13 bsim3v3 2SK3704 6169 bsim3 26E03 Contextual Info: 2SK3704 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.4 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.58 RDSW 1.67E+04 WINT NFACTOR 0.53 CDSCD PCLM 0.3 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.0E-11 CGDL 3.0E-10 CLC	Original	2SK3704 7E-07 0E-21 0E-11 0E-10 0E-09 0E-07 6169770E-6 6169770E-12 3E-05 2SK370* spice 0.13 bsim3v3 2SK3704 6169 bsim3 26E03	PDF
0.13 bsim3v3 Abstract: MCH3377 Contextual Info: MCH3377 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 -0.80 NLX 3.20E-07 DVT2 -0.01 UB 1.13E-21 AGS 0.28 2.25E+03 RDSW WINT 0.56 NFACTOR CDSCD PCLM 1.60 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 3.00E-11 CGDL 4.00E-10	Original	MCH3377 20E-07 13E-21 00E-11 00E-10 0E-09 00E-08 578202E-6 578202E-12 12E-03 0.13 bsim3v3 MCH3377	PDF
VEC2303 Abstract: 13E02 18E-09 Contextual Info: VEC2303 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.628 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS -0.32 RDSW 2.73E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.76 DROUT 0.62 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 4.2E-11 CGDL 6.1E-10	Original	VEC2303 2E-07 0E-21 2E-11 1E-10 0E-07 796596E-6 796596E-12 3E-02 VEC2303 13E02 18E-09	PDF
bsim3 Abstract: 0.13 bsim3v3 MCH6321 22E04 Contextual Info: MCH6321 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.8 NLX 3.2E-07 DVT2 -0.01 UB 1.13E-21 AGS 0.28 RDSW 2.25E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.6 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 3.0E-11 CGDL 4.0E-10	Original	MCH6321 2E-07 13E-21 0E-11 0E-10 0E-09 0E-08 578202E-6 578202E-12 12E-03 bsim3 0.13 bsim3v3 MCH6321 22E04	PDF
0.13 bsim3v3 Abstract: VEC2607 Contextual Info: VEC2607_Pch SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.628 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS -0.32 RDSW 2.73E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.76 DROUT 0.62 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 4.2E-11 CGDL 6.1E-10	Original	VEC2607 2E-07 0E-21 2E-11 1E-10 0E-07 796596E-6 796596E-12 3E-02 0.13 bsim3v3	PDF
rpp1k1 Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate	Original	XT018 XT018 18-micron rpp1k1	PDF
0.6 um cmos process Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode Contextual Info: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in	Original		PDF
XP018 Contextual Info: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single	Original	XP018 XP018 18-micron	PDF
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Contextual Info: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library	PDF
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Contextual Info: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials	PDF
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model	PDF

XH018 Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model	PDF
bsim3 0.18 micron parameters Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width	PDF
spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3	PDF

0.13 BSIM3V3 Search Results

0.13 BSIM3V3 Datasheets Context Search

0.13 bsim3v3

bsim3

2SK370* spice

0.13 bsim3v3

VEC2303

bsim3

0.13 bsim3v3

rpp1k1

0.6 um cmos process

XP018

CMOS Process Family

0.6 um cmos process

nmos transistor 0.35 um

CMOS

XH018

bsim3 0.18 micron parameters

spice model Tunnel diode

CMOS

XH035