0.1 250V Search Results
0.1 250V Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG250V2YMS3 |
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A | Datasheet |
0.1 250V Price and Stock
API Delevan PT150-1250-VMFIXED IND 150UH 5.7A 60 MOHM TH |
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PT150-1250-VM | Bulk |
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Sensata Circuit Breakers JLM-1-37901-250-VCIR BRKR MAG-HYDR LEVER |
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JLM-1-37901-250-V | Bulk | 3 |
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JLM-1-37901-250-V |
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JLM-1-37901-250-V | 1 |
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Carling Technologies V1DAS00C-AZB00-000 (RCV-37101250 | | V1DAS00CAZB00000)ROCKER SWITCH, SEALED, CONTURA, V-SERIES |
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V1DAS00C-AZB00-000 (RCV-37101250 | | V1DAS00CAZB00000) | Bulk | 8 Weeks | 10 |
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Airpax JLM-1-37901-250-V |
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JLM-1-37901-250-V | 5 |
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BQ Cable TLY0.12/50-VIWire; TLY; stranded; Cu; 0.12mm2; PVC; violet; 150V,300V; 50m |
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TLY0.12/50-VI | 100 | 50 |
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0.1 250V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Transistors IC SMD Type 250V N-Channel Enhancement Mode MOSFET KVN4525Z SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 High voltage +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Fast switching speed 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 Low threshold +0.1 0.44-0.1 +0.1 |
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KVN4525Z OT-89 360mA 360mA, 360mA | |
KVN4424Z
Abstract: vertical mosfet
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KVN4424Z OT-89 KVN4424Z vertical mosfet | |
smd transistor marking 26
Abstract: p-channel 250V power mosfet MOSFET marking smd smd transistor 26 smd transistor 2a KVP4424Z vertical mosfet marking 24p sot-89 "marking ms" marking MS
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KVP4424Z OT-89 smd transistor marking 26 p-channel 250V power mosfet MOSFET marking smd smd transistor 26 smd transistor 2a KVP4424Z vertical mosfet marking 24p sot-89 "marking ms" marking MS | |
Contextual Info: Transistors IC SMD Type Product specification FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 |
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FMMT417 OT-23 620pF 20MHz | |
FMMT497
Abstract: MARKING SMD npn TRANSISTOR
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FMMT497 OT-23 100mA 250mA 100mA, 250mA, 100MHz FMMT497 MARKING SMD npn TRANSISTOR | |
Contextual Info: Transistors SMD Type Product specification FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter |
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FMMT597 OT-23 -50mA, -100mA, -20mA -100mA -50mA | |
597 smd transistor
Abstract: FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23
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FMMT597 OT-23 -250V -50mA, -100mA, -20mA -100mA -50mA 597 smd transistor FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23 | |
FMMT417
Abstract: 417 TRANSISTOR SMD TRANSISTOR MARKING BR
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FMMT417 OT-23 620pF 20MHz FMMT417 417 TRANSISTOR SMD TRANSISTOR MARKING BR | |
marking 415 sot23
Abstract: FMMT415
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FMMT415 OT-23 620pF 20MHz marking 415 sot23 FMMT415 | |
FMMT415Contextual Info: Transistors IC SMD Type Product specification FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 |
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FMMT415 OT-23 620pF 20MHz FMMT415 | |
3N25Contextual Info: MOSFET SMD Type N-Channel MOSFET KXU03N25 TO-252 • Features Unit: mm ● VDS V = 250V +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2 1 2.3 3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 |
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KXU03N25 O-252 3N25 | |
2SC4702
Abstract: XV SOT23
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2SC4702 OT-23 2SC4702 XV SOT23 | |
Contextual Info: Transistors SMD Type Product specification 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 |
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2SC4702 OT-23 | |
Contextual Info: MOSFET SMD Type N-Channel MOSFET KXU05N25 • Features TO-252 ● VDS V = 250V Unit: mm 2 1 2.3 3 +0.1 0.60-0.1 3.80 +0.8 0.50-0.7 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 +0.15 1.50-0.15 +0.15 0.50-0.15 +0.2 9.70-0.2 +0.15 6.50-0.15 |
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KXU05N25 O-252 | |
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2SK2133
Abstract: smd transistor 26
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2SK2133 O-263 2SK2133 smd transistor 26 | |
transistor 2sC3632
Abstract: 2SC3632 2SC3632-Z NPN Transistor 600V
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2SC3632-Z O-252 100mA 400mA -50mA transistor 2sC3632 2SC3632 2SC3632-Z NPN Transistor 600V | |
Contextual Info: Product specification 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1 High speed tf +0.2 9.70 -0.2 |
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2SC3632-Z O-252 100mA 400mA -50mA | |
SMD npn TRANSISTOR 1a 200v
Abstract: 2SC2946 MARKING SMD npn TRANSISTOR 1a SMD transistor MARKING L 1A TRANSISTOR SMD 1a 9
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2SC2946 O-252 100mA SMD npn TRANSISTOR 1a 200v 2SC2946 MARKING SMD npn TRANSISTOR 1a SMD transistor MARKING L 1A TRANSISTOR SMD 1a 9 | |
Contextual Info: Crimp Connector MI Series 5.0mm Spacing • Connection Diagram Right-Angle Type Straight Type 23.5 4.0 for 2P 5.7 {(n 2) 5+7.5} ± 0.1 7.5 ± 0.1 5.0 ± 0.1 0.1(Spacing) (Excluding 1P) n 1.9 ± 0.1 2.5 ± 0.1 {(n 2) 5+17.8} ± 0.1 ■ Structural Diagram |
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1000M SWG18 -P3001 -P3002 -P3003 -P3004 -P3005 -P3006 -P6103 -P6104 | |
Contextual Info: Transistors SMD Type Product specification 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 |
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2SA1413-Z -600V O-252 -60mA -50mA -250V | |
Contextual Info: MOSFET SMD Type Product specification 2SK3294 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low input capacitance Ciss = 1500 pF TYP. VDS = 10 V, VGS = 0 V Avalanche capability rated |
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2SK3294 O-263 | |
2SK3294Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3294 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low input capacitance Ciss = 1500 pF TYP. VDS = 10 V, VGS = 0 V Avalanche capability rated |
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2SK3294 O-263 2SK3294 | |
Contextual Info: Transistors IC SMD Type 250V N-Channel MOSFET KQB6N25 TO-263 5.5A, 500 V. RDS ON = 1 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.6nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 |
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KQB6N25 O-263 | |
600V PNP
Abstract: pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413
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2SA1413-Z -600V O-252 -60mA -50mA -250V 600V PNP pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413 |