0.05 OM Search Results

Contextual Info: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

VNB20N07

Abstract: VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

Contextual Info: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

RGI74A

Contextual Info: ENG. NO SOA-73100-0248 22.00 REF. 0 .8 6 6 9.0 (0.354) 0' 2.56*0.05 (0 . 101) JL NO. A 3.86*0.05 (0.152) A® 3.12*0.05 (0.123) < F È f I WL L- > 6.50 (0.256) SI000257.DGN EDP f A FERRULE 1.70*0.05 A (0.067) SIMILAR ITEM 50 OHM SMB ASSEMBLY NO. S1000248.DGN

Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

Contextual Info: RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of

Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so

Contextual Info: VNP20N07FI VNB20N07/VNV20N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Q. 0.05 a 0.05 n 20 A 20 A 20 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

VNB20N07

Abstract: VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

VNB20N07

Abstract: VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

VNB20N07

Abstract: VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

OMNIFET

Abstract: VNB20N07 VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

LQFP128

Abstract: CI -dp904c
Contextual Info: 2‘o+om + 0.055 0.145 - 0.045 0 . 10 + 0.05 LQFP128-P-1818-0.50 Unit : mm

RN1101MFV

Abstract: RN1106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV
Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05

SD-47308-001

Contextual Info: 10 1.20 5.08*0.05 4 ±0.05 id bi- cTbi— icTbr 1.20 I -e 1.20 *0.05 10X 12.8 2.00 E3 - 0 .9 0 ±0.05 (10X) 15.30 i.55*o.20 1.20 ±0.05 5 ±0.05 2.35*0.20 jcljsi— 3.95*0.05 t|_ p i— i q j i B -15.20- e — 16.20 -17.10 — E ffl 1.65 ±0.05

RN1101MFV

Abstract: RN1106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV
Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05

Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05

Contextual Info: GENNUM C O R P O R A T I OM GX214A Monolithic 4x1 Video Multiplexer DATA SHEET FEATURES CIRCUIT DESCRIPTION • low cost • differential gain at 3.58 MHz, 0.05% max. • differential phase at 3.58 MHz, 0.05 deg. max. • off-isoiation better than 90 dB at 10 MHz

awm 20624

Abstract: C4488 UL20706 UL 20624 20624 UL20624 awm20624 AWM 3 pin awm 20706 20706
Contextual Info: Note: UL Style : AWM 80624 607 BOt AIM 20706 60V 105t *RoHS C om pliant S2 S1 TYPE S3 Code PITCH FC5 1 -xx 1 C 4 4 8 8 * xxmm Pitch Flexible 0.5 Super Flexible 1.0 Flexible 1.25 Flexible 2.54 Low Flexible CW 0.3 0.6 0.8 1.27 CT 0.035 0.05 0.05 0.08 Series •

Contextual Info: 1.474+ 0 .005 [3 7.44+ 0 .13]- 0 .7 3 7 + 0 .0 0 2 " [18.72+0.05] 0 0 0 2.5 1+ 0.05] < |> 2X 00.1 0 0 [02.54] J X SIZE 16 BI-SPRING CONTACT 0 .1 9 7 + 0 .0 0 2 §EE DETAIL A [5.00+0.05] TYP. MTACT HOLE PATTERN NOTES: 1. MATERIALS AND FINISHES: INSULATOR: GLASS FILLED POLYESTER. UL 9 4 V - 0 , COLOR BLUE.

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Unit: mm z A wide range of resistor values is available for use in various circuits. z Complementary to the RN2110MFV~RN2111MFV 0.32 ± 0.05 0.80 ± 0.05 0.4

RN1112MFV

Abstract: RN1113MFV RN2112MFV RN2113MFV
Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112MFV,RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22 ± 0.05 1.2 ± 0.05 z A wide range of resistor values is available for use in various circuits.