0.01UF CAP Search Results

DSA535SG

Abstract: DSO323SJ DSV323SJ DSO753SJ DSV323SV DSB535SG DSO533SJ DSA221SJ DSO323 DSB221SJ
Contextual Info: Measurement Circuit DSA222MAA DSA222MAB 0.01uF 0.01uF （VC-） TCXO Module T.P.3 10pF Vcont T.P.1 Load_R1,2=10kΩ Load_C1,2=10pF Total Fixture and Probe Capacitance 0.01uF 0.01uF - T.P.1 1000pF Vdd 0.01 F Output (VC-)TCXO − Output1 T.P.1 Power Supply

B38 SMD Transistor

Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
Contextual Info: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805

TG12

Abstract: SMBJ58A
Contextual Info: 4 3 SS-7188S-A-NF SS-7188S-A-NF DATA2 RT1 75 RT2 75 RT3 75 RT4 75 RT5 75 RT6 75 RT7 75 RT8 75 SPARE2 RV1 SD4-90 OPT RV2 SD4-90 OPT RV3 SD4-90 OPT CT1 CT2 CT3 CT4 0.01uF 0.01uF 0.01uF 0.01uF RV4 SD4-90 200V 200V 200V 200V 0805S 0805S 0805S 0805S OPT CG2 1000pF

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10QA08 RoHS compliance product ○EMK063B7103MP 16V 0603 X7R 0.01uF +/-20% t=0.33mmMAX 16V 0201 X7R 0.01uF +/-20% t=0.013inchMAX EMK063B7103MP DC Bias Char. 20 EMK063B7103MP Capacitance Freq.

MAX232CSE

Abstract: MBRS120T3 MC74HC00AD 01UF 2.1mm DC power jack connector MC7805ACT 2.1mm DC power jack 100UF C210 DSP56002
Contextual Info: 2 1 POWER CONNECTOR J1 C22 0.01uF C21 0.01uF C25 0.01uF 24 GG NN DD U1 MC7805ACT 1 IN OUT C18 100UF 0.33uF 25V 35V C37 C26 0.1uF ARE TANTALUM OR MYLAR CHIPCAPS MBRS120T3 D1 MBRS120T3 D2 C34 0.1uF P1 IS 2.1mm Power Jack NOTE: C18,C19 MBRS120T3 D4 MBRS120T3

ceramic capacitor 0201 1 uf

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10QA08 RoHS compliance product ○EMK063B7103KP 16V 0603 X7R 0.01uF +/-10% t=0.33mmMAX 16V 0201 X7R 0.01uF +/-10% t=0.013ichMAX EMK063B7103KP DC Bias Char. 20 EMK063B7103KP Capacitance Freq. 1

JMK042BJ103KC

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10HC08O RoHS compliance product ○JMK042BJ103KC 6.3V 0402 B/X5R 0.01uF +/-10% t=0.22mmMAX 6.3V 01005 B/X5R 0.01uF +/-10% t=0.009inchMAX JMK042BJ103KC DC Bias Char. 10 JMK042BJ103KC Capacitance Freq.

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- Sep-2010 ○L2K096BJ103MP 10V 0906 B/X5R 0.01uF +/-20% t=0.33mmMAX 10V 0302 B/X5R 0.01uF +/-20% t=0.013inchMAX L2K096BJ103MP DC Bias Char. 10 L2K096BJ103MP Capacitance Freq. 10 Capacitance[uF] .

L2K096BJ103KP

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- Sep-2010 ○L2K096BJ103KP 10V 0906 B/X5R 0.01uF +/-10% t=0.33mmMAX 10V 0302 B/X5R 0.01uF +/-10% t=0.013inchMAX L2K096BJ103KP DC Bias Char. 10 L2K096BJ103KP Capacitance Freq. 10 Capacitance[uF] .

33R 8P4R

Abstract: C3198 CAP0402 AD148 29ee512 CAP0402 0.1UF 16V MTH315D158 con3 b27 B6248 XRS10L620
Contextual Info: A B C GND T+ TGND RR+ GND 0.1UF 1 2 3 4 5 6 7 GND GND T+ GND TGNDGND GND RR+ GND CN3 1 2 3 4 5 6 7 0R 0805 R31 2 3 4 5 ESATA CONN SATA_CON_EXT 8 9 10 11 CN2 SATA_CON_0.5MM U1 620_1 C31 9 8 7 6 5 R30 CAP0402 0805 0R C8 0.01UF VDDA1 C7 0.01UF VDDA2 C11 0.01UF

JMK042BJ103MC

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10HC08O RoHS compliance product ○JMK042BJ103MC 6.3V 0402 B/X5R 0.01uF +/-20% t=0.22mmMAX 6.3V 01005 B/X5R 0.01uF +/-20% t=0.009inchMAX JMK042BJ103MC DC Bias Char. 10 JMK042BJ103MC Capacitance Freq.

FT232B

Abstract: 74HCU04 UX60A-MB-5ST FT232BA
Contextual Info: A B C D E F G V850ES/JG3-L フラッシュ書き込み回路例 Example of V850ES/JG3-L flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 27pF 2 2 6MHz 27pF 5V 3.3V EECS TEST AVCC AGND XTout XTin VCC TXD 32 31 30 29 28 27 26 25 U1 39nH V850ES/JG3-L

UX60A-MB-5ST

Abstract: FT232B FT232BA UX60AMB5ST 74HCU04 ic 8 pin with number 1 is vss v850es
Contextual Info: A B C D E F G V850ES/JG3-H フラッシュ書き込み回路例 Example of V850ES/JG3-H flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 27pF 2 2 6MHz 27pF U1 3.3V EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29 28 27 26 25 5V 1000pF V850ES/JG3-H

FT232B

Abstract: 74HCU04 UX60A-MB-5ST UX60AMB5ST v850es
Contextual Info: A B C D E F G V850ES/Kx2 フラッシュ書き込み回路例 Example of V850ES/Kx2 flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 27pF 2 2 6MHz 27pF 5V 5V EECS TEST AVCC AGND XTout XTin VCC TXD 32 31 30 29 28 27 26 25 U1 39nH V850ES/KG2 100GC

74HC125

Abstract: FT232B 74HCU04 UPD78F1235GB UX60A-MB-5ST
Contextual Info: A B C D E F G 78K0R/IE3 フラッシュ書き込み回路例 Example of 78K0R/IE3 flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 5V 27pF 6MHz 5V 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29 28 27 26 25 3 7 U3

102k 50v capacitor

Abstract: dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3
Contextual Info: Qty RefDes Part Number Value Description 5 C10, C23, C25, C29, C30 GRM39X7R103K025A 0.01uF Capacitor, Ceramic, 0.01uF, 25V, X7R, 10% muRata 2 C9, C32 GRM39X7R223K025A 1 2 1 2 1 2 2 1 C46 C27, C35 C12, C15, C24, C43 C13 C19 C14, C36 C16 C42, C44 C39, C45 C18

UX60A-MB-5ST

Abstract: 74HC125 FT232B 74HCU04 UX60AMB5ST uPD78F8041
Contextual Info: A B C D E F G UPD78F8043 フラッシュ書き込み回路例 Example of UPD78F8043 flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 5V 27pF 6MHz 5V 1 2 3 5V 4 U1 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 5 32 31 30 29 28 27 26 25 3 7

74HC125

Abstract: uPD78F1026 FT232B NEC 78k0R FG3 78K0R circuit 74HCU04 UX60A-MB-5ST
Contextual Info: A B C D E F G 78K0R/KE3-L USB フラッシュ書き込み回路例 Example of 78K0R/KE3-L(USB) flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 3.3V 27pF 6MHz 3.3V 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29

UPD78F1508GF

Abstract: 74HC125 74HCU04 FT232B UX60A-MB-5ST
Contextual Info: A B C D E F G 78K0R/LH3 フラッシュ書き込み回路例 Example of 78K0R/LH3 flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 2 5V 27pF 27pF 6MHz 78K0R/LH3 5V 1KΩ FLMD0 VDD AVDD0 AVDD1 EVDD TOOL0 REGC U3 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND

74HC125

Abstract: FT232B 74HCU04 UX60A-MB-5ST 227pF kc2l
Contextual Info: A B C D E F G 78K0/KC2-L フラッシュ書き込み回路例 Example of 78K0/KC2-L flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 5V 27pF 6MHz 5V 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29 28 27 26 25 3 7

Contextual Info: 2.5±0.15 #4 #3 2.0±0.15 PIN 1 2 3 4 #1 FUNCTION VCTCXO TCXO Vcc GND OUTPUT Vdd GND #2 Recommended Land Pattern 0.9 max 2.05 0.9 1.45 0.01uF 1.95 0.8 #4 0.6 #3 1.35 Note: Recommended using an approximately 0.01uF bypass capacitor between PIN 2 and 4. UNLESS OTHERWISE SPECIFIED:

74HC125

Abstract: UPD78F18 74HCU04 FT232B UX60A-MB-5ST FT232
Contextual Info: A B C D E F G 78K0R/KG3-C フラッシュ書き込み回路例 Example of 78K0R/KG3-C flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 5V 27pF 6MHz 5V 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29 28 27 26 25 3

74HC125

Abstract: FT232B UX60A-MB-5ST 74HCU04 usbdm FT232
Contextual Info: A B C D E F G 78K0R/KE3-L フラッシュ書き込み回路例 Example of 78K0R/KE3-L flash writing circuit 1 1 5V 470Ω 0.01uF 0.01uF 0.01uF 2 27pF 2 5V 27pF 6MHz 5V 1 2 3 5V 4 U1 5 6 EECS TEST AVCC AGND XTout XTin VCC TXD 39nH 32 31 30 29 28 27 26 25 3

SDI-12 circuit

Abstract: 1620a 17 FIN1108 R5910 SCK SDA WP 1213D EN56 EN78 D123D lt3080
Contextual Info: 5 4 3 2 1 REVISION HISTORY VDD ECO R17 100 0201 CLARENCE M. GND 10 1% 1 2 3 4 0.01uF R39 33.2 1% 10 1% C51 R28 OPT 2 R27 OPT 4.7pF 4 C9 C10 8.2pF 8.2pF 1 R40 33.2 1% C7 0.01uF R83 OPT R82 OPT C23 R59 AIN1+ R20 100 0201 2.2uF 10 1% R10 VDD 10 1% R60 C11 OPT