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080A
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Essentra Components
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TAPERED CAP - OD RANGE: 68.7 - 7 |
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NCE6080A
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NCEPOWER
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NCE6080A is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-220-3L package. |
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CP0080ABN
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Jiangsu JieJie Microelectronics Co Ltd
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Bidirectional thyristor surge protector in SMA package with 6V switching voltage, 80A peak pulse current (10/1000μs), low capacitance of 20pF, and 30kV ESD protection, designed for overvoltage transient protection in communication equipment. |
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AK6080A
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, 6.5mΩ typical RDS(ON) at VGS=10V, and 7.5mΩ at VGS=4.5V, featuring advanced trench technology for low on-resistance and high efficiency in switching applications. |
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NCE6080AI
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NCEPOWER
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60V, 80A NCE6080AI trench MOSFET with 5.5mOhm RDS(ON) at VGS=10V, advanced gate charge design, suitable for PWM and load switching applications, housed in TO-251 package. |
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JX080A
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Jiangsu JieJie Microelectronics Co Ltd
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8A sensitive gate SCR with 800V repetitive peak off-state and reverse voltage, high dV/dt capability, 2500 VRMS insulation rating, TO-220A package, and 100 A/μs critical rate of rise of on-state current. |
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NCE6080AT
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NCEPOWER
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NCE6080AT is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 5.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-247 package. |
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NCE6080AK
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NCEPOWER
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60V, 80A NCE6080AK N-channel enhancement mode power MOSFET with trench technology, offering 6 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and high current capability in a TO-252-2L package. |
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NCE6080A
