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040A
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Essentra Components
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TAPERED CAP - OD RANGE: 24.5 - 2 |
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JMSL1040AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 30mΩ RDS(ON), 26A continuous drain current, low gate charge, and 100% UIS tested, available in TO-220-3L and TO-263-3L packages. |
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JMSL1040AK
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-channel Power MOSFET in TO-252-3L package with 32 mΩ typical RDS(on) at 10V VGS, 24A continuous drain current, low gate charge, and designed for power management, switching, and motor drive applications. |
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JMH65R040ASFD
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in TO-247-3L package with 40 mOhm RDS(on) at 10V VGS, 71A continuous drain current, low gate charge, fast switching capability, and ultra-fast body diode for high-efficiency power applications. |
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B1040A1
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JCET Group
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DFN1006-2L surface-mount semiconductor package with 1.00 mm D, 0.60 mm E, 0.50 mm b, 0.65 mm e, and 0.25 mm L dimensions in millimeters, designed for use with 1 inch ceramic PCB featuring 2 ounces of copper. |
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JMH65R040ASFDQ
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Jiangsu JieJie Microelectronics Co Ltd
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650 V, 71 A superjunction power MOSFET in TO-247-3L package with 35 mΩ typical RDS(ON) at 10 V gate voltage, designed for high-efficiency DC-DC converters and on-board battery chargers. |
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JMSL1040AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 30mΩ RDS(ON), 26A continuous drain current, low gate charge, and 100% UIS tested, available in TO-220-3L and TO-263-3L packages. |
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JMSL1040APD
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-Ch Power MOSFET with 100 V drain-to-source voltage, 31 mΩ typical RDS(ON) at VGS = 10 V, 12.3 A continuous drain current, and low gate charge, housed in an SOP-8L package. |
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B1040A2
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JCET Group
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DFNWB1.0x0.6-2L plastic-encapsulate diodes feature a 1.0 mm x 0.6 mm surface-mount package, operating junction temperature range as specified, with capacitance, forward current, and reverse voltage characteristics suitable for high-density electronic applications. |
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JMSL1040AV
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Jiangsu JieJie Microelectronics Co Ltd
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100V 4.7A N-Ch Power MOSFET in U-DFN2020-6L package with 29mΩ RDS(ON) at VGS=10V, low gate charge, and 1.5W power dissipation, suitable for power management and switching applications. |
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JMSL1040AGDQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V 28mΩ dual N-channel power MOSFET in PDFN5x6-8L-D package, with 22A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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CN88L040AOGR
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CHIPNORTH
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High-precision, high-input-voltage, low-quiescent-current LDO linear regulator with 4.5V to 35V input range, 150mA output current, ±2% output accuracy, and up to 12V output options.High-precision, low-dropout linear regulator with 4.5V to 35V input, 2.5V to 12V output options, 150mA output current, 6uA typical quiescent current, and high ripple rejection, available in multiple packages.High-precision, low-dropout linear regulator with 4.5V to 35V input, 2.5V to 12V output options, 150mA output current, 6uA typical quiescent current, and integrated over-temperature and over-current protection.High-precision, high-input-voltage, low-quiescent-current linear regulator with 4.5V to 35V input range, 2.5V to 12V output options, 150mA output current, and 6uA typical quiescent current, featuring high PSRR and low dropout.High-precision, high-input-voltage, low-quiescent-current linear regulator with 4.5V to 35V input range, up to 150mA output current, ±2% output accuracy, and integrated thermal and overcurrent protection. |
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JMSL1040AY
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in SOT-223-3L package with 30 mΩ typical RDS(ON) at 10V VGS, 13A continuous drain current, low gate charge, and 100% UIS tested. |
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JMSL1040AE
