NCE025N30G
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NCEPOWER
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NCE025N30G is a 30V, 115A DFN5x6-8L MOSFET with 2.2mΩ RDS(ON) at VGS=10V, advanced trench technology, low gate charge, suitable for high-frequency switching and DC/DC conversion applications. |
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JMTC025N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 190A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 2.6mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency in power management applications. |
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NCEAP025N60AG
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NCEPOWER
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NCEAP025N60AG is an Automotive N-Channel Super Trench II Power MOSFET with 60 V drain-source voltage, 185 A continuous drain current, 2.0 mΩ typical RDS(on) at VGS = 10 V, and 175 °C operating junction temperature. |
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JMTE025N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 190A, 1.5mΩ N-channel Power Trench MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMTQ025N02A
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Jiangsu JieJie Microelectronics Co Ltd
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20V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.7m ohm at VGS=10V, available in PDFN3x3-8L package, suitable for load switching, PWM applications, and power management. |
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FM33LC025N
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Shanghai Fudan Microelectronics Group Co Limited
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FM33LC0xx is a low-power MCU based on ARM Cortex-M0, featuring multiple GPIOs, UART, SPI, I2C, USB 2.0 FS, ADC, AES hardware acceleration, and low-power timer modules with support for sleep and deep-sleep modes.Low-power FM33LC0xx microcontrollers based on ARM Cortex-M0 core, featuring up to 256KB Flash, 24KB RAM, USB FS device, multiple timers, ADC, LCD driver, AES hardware acceleration, and rich peripheral support including UART, SPI, I2C, and DMA. |
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NCE025N30K
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NCEPOWER
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NCE025N30K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 115A continuous drain current, and low on-resistance of 2.2mΩ typical at 10V VGS, utilizing advanced trench technology for high efficiency in DC/DC converters and high-frequency switching applications. |
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NCE025N30G
