JSPE10200ACT
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Jiangsu JieJie Microelectronics Co Ltd
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10A Schottky Barrier Rectifier in TO-263 surface mount package with 200V maximum repetitive peak reverse voltage, low forward voltage drop, and lead-free compliant with EU RoHS. |
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VS40200AP
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VANGUARD
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40V/50A N-Channel Advanced Power MOSFET with 3.3 mΩ typical RDS(on) at VGS=10V, 118A silicon-limited current, PDFN5x6 package, and 100% avalanche tested for high efficiency power switching applications. |
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JSPC30200ACT
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Jiangsu JieJie Microelectronics Co Ltd
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30A Schottky Barrier Rectifier in TO-220AB package with 200V maximum repetitive peak reverse voltage, low forward voltage drop, high current and surge capability, lead-free compliant with RoHS, suitable for high efficiency power rectification applications. |
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JSPF10200ACT
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Jiangsu JieJie Microelectronics Co Ltd
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10A Schottky Barrier Rectifier in ITO-220AB package with 200V maximum repetitive peak reverse voltage, low forward voltage drop, and high current capability, compliant with RoHS. |
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JSPF20200ACT
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Jiangsu JieJie Microelectronics Co Ltd
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20A Schottky barrier rectifier with 200V maximum repetitive peak reverse voltage, low forward voltage drop, high current and surge capability, in ITO-220AB package. |
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VS40200AT
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VANGUARD
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40V/120A N-Channel Advanced Power MOSFET with 3.5 mOhm RDS(on) at VGS=10V, TO-220AB package, silicon-limited continuous drain current of 226A, and 417W power dissipation capability. |
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VS40200AD
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VANGUARD
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40V/80A N-Channel Advanced Power MOSFET with 3.8 mΩ typical RDS(on) at VGS=10V, TO-252 package, silicon-limited current of 165A, and maximum power dissipation of 250W at 25°C case temperature. |
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VS40200ATD
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VANGUARD
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40V/120A N-Channel Advanced Power MOSFET with 3.5 mΩ typical RDS(on) at VGS=10V, TO-263 package, silicon-limited continuous drain current of 226A, and 417W maximum power dissipation at 25°C case temperature. |
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