|
006A
|
|
Essentra Components
|
TAPERED CAP - OD RANGE: 6.7 - 8. |
Original |
PDF
|
4.78MB |
|
JEER3006AL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Superfast recovery rectifier in TO-220A-2L package with 600V repetitive peak reverse voltage, 30A average forward current, low forward voltage, fast recovery time, and 2500V RMS isolation voltage for high-frequency switch-mode power supplies and PFC applications. |
Original |
PDF
|
|
|
|
JECR1006AL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
EPI hyperfast soft recovery rectifier in TO-220A-2L package with 600V maximum repetitive peak reverse voltage, 10A average forward current, low reverse leakage, and 2500V RMS isolation voltage. |
Original |
PDF
|
|
|
|
JMSL1006AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100V N-channel Power MOSFET in TO-252-3L package with 5.4 mΩ typical RDS(ON) at VGS = 10V, 99A continuous drain current, low gate charge, and designed for power management, motor driving, and switching applications. |
Original |
PDF
|
|
|
|
JMTK2006A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
20V, 60A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) < 6.2mΩ at VGS = 4.5V, advanced trench technology, low gate charge, and 100% UIS tested. |
Original |
PDF
|
|
|
|
SM4006A
|
|
SUNMATE electronic Co., LTD
|
Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications. |
Original |
PDF
|
|
|
|
JECR3006AL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Hyperfast soft recovery rectifier in TO-220A-2L package with 600V repetitive peak reverse voltage, 30A average forward current, low forward voltage, and 2500V RMS isolation voltage for high-frequency switched-mode power supplies. |
Original |
PDF
|
|
|
|
CL4006A30L6M
|
|
ChipLink Tech
|
Linear charging management IC with integrated 200mA LDO in SOT23-6L package, featuring 4.24V float charge voltage, up to 500mA programmable charging current, and 2uA standby current. |
Original |
PDF
|
|
|
|
JMSH1006AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100V N-channel Power MOSFET in TO-252-3L package with 5.5 mΩ RDS(ON) at 10V VGS, 90A continuous drain current, low gate charge, and 1.9 ohm typical gate resistance, suitable for power management and motor drive applications. |
Original |
PDF
|
|
|
|
JECR2006AL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
20A average forward current, 600V maximum repetitive peak reverse voltage, hyperfast soft recovery rectifier in TO-220A-2L package with low reverse leakage and 2.1g weight. |
Original |
PDF
|
|
|
|
JMTK4006A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
N-channel Enhancement Mode Power MOSFET JMTK4006A with 40V drain-source voltage, 70A continuous drain current, RDS(ON) less than 5.9mΩ at VGS = 10V, and low gate charge, suitable for power management and load switching applications. |
Original |
PDF
|
|
|
JEER3006AL
