AK60P40F
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AK Semiconductor
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AK60P40F P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -40A continuous drain current, and 35mΩ maximum RDS(ON) at VGS=-10V, featuring low gate charge and high avalanche energy capability. |
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AK60P40
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AK Semiconductor
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AK60P40 P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -40A continuous drain current, and 19mΩ typical RDS(ON) at VGS=-10V, suitable for power switching and high frequency applications. |
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NCE40P40D
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -40V drain-source voltage, -40A continuous drain current, and 14mΩ RDS(ON) at VGS=-10V, utilizing trench technology for low gate charge and high current switching applications. |
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AK60P40AY
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK60P40AY with -60V drain-source voltage, -4.6A continuous drain current, RDS(ON) less than 75mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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AK40P40D
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AK Semiconductor
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AK40P40D P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -40A continuous drain current, and 14mΩ RDS(ON) at VGS=-10V, featuring low gate charge and high current load capability. |
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NCE30P40K
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NCEPOWER
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NCE30P40K is a P-channel enhancement mode power MOSFET with -30V drain-source voltage, -40A continuous drain current, and low on-resistance of 7.8mΩ at VGS=-10V, suitable for high-current switching applications. |
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NCE60P40F
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -40A continuous drain current, and 35mΩ typical RDS(ON) at VGS=-10V, designed for high-frequency switching and power supply applications. |
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NCE40P40K
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -40A continuous drain current, RDS(ON) less than 14mΩ at VGS=-10V, and low gate charge, suitable for high current load and power switching applications. |
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AK60P40F
