.120-80 UNS Search Results

Contextual Info: Digital Display 80/120/200 mm M7E CSM_M7E(80_120_200mm)_DS_E_10_1 Digital Display with Wire-saving Serial Transmission Function (B7A Output) • Single-color (red or green) and three-color (red, green, or orange selectable) displays with a character height of 80, 120,

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

Contextual Info: IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: IS28F004BV/BLV 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns — 2.7V: 120 ns

Contextual Info: ISSI IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

SFF-8074i

Abstract: apd model SFP CONNECTOR GR-468 1531nm
Contextual Info: Datasheet Gigabit Ethernet CWDM SFP Transceivers Features Data rates from 1.062 to 1.25 Gbps 120 km, 80 km, and 50 km reach models Single 3.3 V supply CWDM wavelengths, DFB laser APD receiver SFP-GDCWEZX-xx Dual LC connector Digital Diagnostic SFF-8472 compliance

8F004

Contextual Info: in U I v PRELIMINARY 5 VOLT BOOT BLOCK FLASH MEMORY 28F002BC x8 • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase

Contextual Info: ISSI IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns

Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

6120A2

Abstract: DSD1792 OPA4134 PCM1792 SLMA002 TPA6120A2 TPA6120A2DWP TPA6120A2DWPR DSD17
Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase ■ Low Power Consumption

Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

Contextual Info: TPA6120A2 www.ti.com SLOS431 – MARCH 2004 HIGH FIDELITY HEADPHONE AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION 80 mW into 600 Ω From a ±12-V Supply at 0.00014% THD + N Current-Feedback Architecture Greater than 120 dB of Dynamic Range

Contextual Info: ISSI IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns

MAX714

Contextual Info: ISSI IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns

RFID loop antenna 13.56MHz

Abstract: IFL10M 7 band audio spectrum analyzer ic IBF10 RFID antenna 13.56MHz IRJ09 50MHz10GHz lcd 16 UL94V-0 pic basic examples IFL12
Contextual Info: Flexible Composite-Type Electromagnetic Shield Materials For EMI Prevention Flexield Series IRJ17, IRJ09, IRJ04, IFL10M TDK CORPORATION The level jumps to 40 at 5MHz TDK CORPORATION Permeability IRJ04 200 180 160 140 120 100 80 60 40 20 By keeping the value under 40, IRJ04 covers

Contextual Info: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit

Contextual Info: ISSI IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION OCTOBER 1997 SmartVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration High-Performance Read M axim um Access Tim es — 5V: 60/80/120 ns

Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Perform ance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte W rite and Block Erase ■ Low Power Consumption

82371FB

Abstract: 28F002BC 82437fx 36A4
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit

28F002BC

Abstract: P28F002BC-T120 82437fx
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max. Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit