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Excelta
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TWEEZERS - STRAIGHT STRONG MEDIU |
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HM3400PR
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VBsemi Electronics Co Ltd
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N-Channel 30-V MOSFET with 0.022 ohm RDS(on) at 4.5 V VGS, 6.8 A continuous drain current, 10 nC gate charge, SOT89 package, RoHS compliant and halogen-free. |
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JMTV200P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTV200P03A in DFN2020-6L package, -30V drain-source voltage, -11A continuous drain current, RDS(ON) less than 17.7mΩ at VGS -10V, lead-free and 100% UIS tested. |
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JMTQ100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -40A continuous drain current, and RDS(on) less than 9.4mΩ at VGS=-10V, available in PDFN3x3-8L package. |
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HSH100P06
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Huashuo Semiconductor
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HSH100P06 is a P-channel 60V trench MOSFET with 5.5 mΩ RDS(ON) at -10V VGS, 100A continuous drain current, low gate charge, and fast switching for synchronous buck converters. |
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SMD1200PL
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SOD-123FL package with 20 to 200V repetitive peak reverse voltage, 1.0A average forward rectified current, and 1.0A forward surge current capability, suitable for high efficiency low power loss applications. |
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JMTG100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 9.5mΩ at VGS=-10V, housed in a PDFN5x6-8L package. |
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10BQ0100PBF
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode 10BQ100PBF with 1.0A average rectified current, 100V DC blocking voltage, 0.85V forward voltage at 1.0A, operating junction temperature from -65 to +125°C, in SMA/DO-214AC package.Surface mount Schottky barrier diode 10BQ100PBF with 1.0 A average rectified current, 100 V DC blocking voltage, 0.70 V forward voltage at 1.0 A, and operating junction temperature from -65 to +125°C. |
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CJAC100P03
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JCET Group
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P-Channel Power MOSFET CJAC100P03 with -30V drain-source voltage, -100A continuous drain current, 2.3mΩ RDS(on) at -10V VGS, and low gate charge in a PDFN 5x6-8L package for high-density switching applications. |
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HSP100P06
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -100A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 210W power dissipation in TO-220 package. |
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JMTQ200P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTQ200P03A with -30V drain-source voltage, -12A continuous drain current, and RDS(ON) less than 17.4mΩ at VGS = -10V, housed in a PDFN3x3-8L package. |
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JMTK100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -55A continuous drain current, RDS(on) less than 10mΩ at VGS = -10V, and low gate charge, suitable for power management and load switch applications. |
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HSBA100P03
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Huashuo Semiconductor
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P-Ch 30V MOSFET with -100A continuous drain current, 2.6mΩ RDS(ON), low gate charge, and 140W power dissipation in a PRPAK5x6 package. |
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HSU100P04
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Huashuo Semiconductor
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HSU 100P04 is a P-channel 40V trench MOSFET with 5.8 mOhm RDS(on), 100A continuous drain current, low gate charge, and 1.8 C/W junction-to-case thermal resistance, suitable for synchronous buck converters. |
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SEWF2512D3L00P9
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ResistorToday
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Fixed Resistor, Metal Strip, 4W, 0.003ohm, 0.5% +/-Tol, 25ppm/Cel, Surface Mount, 2512 |
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HSBA100P04
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Huashuo Semiconductor
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HSBA100P04 is a P-channel 40V MOSFET with 5.8 mΩ RDS(ON), 100A continuous drain current, and low gate charge, suitable for synchronous buck converters using advanced trench technology in a PRPAK5x6 package. |
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QMA6100P
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QST Corporation
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2x2x0.95 mm3, 12-pin LGA, tilt, motion, shock, vibration, screen rotation, step counting, sleep monitor, gaming, navigation, 14-bit ADC, low noise, high accuracy, low power, I2C, SPI. |
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HSU100P03
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Huashuo Semiconductor
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P-Ch 30V Fast Switching MOSFET with -100A continuous drain current, 4mΩ RDS(ON), low gate charge, TO252 package, suitable for synchronous buck converters. |
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HM3400PR
