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TQ3001
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Supertex
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N-Channel and P-Channel Quad Power MOSFET Arrays |
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JMTQ3006B
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 6.1mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
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JMTQ3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. |
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JMTQ3006C
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 52A, 6.1mΩ N-channel Power Trench MOSFET in PDFN3x3-8L package with low RDS(ON), high current capability, and optimized gate charge for power management and load switching applications. |
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HKTQ30P03
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET HKTQ30P03 in PDFN3333 package, with -30V drain-source voltage, -60A continuous drain current at 25°C, and on-resistance of 7.4mΩ typical at VGS = -10V. |
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JMTQ3008A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN3x3-8L package, suitable for load switch, PWM, and power management applications. |
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JMTQ3005A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTQ3005A with 30V VDS, 50A ID, RDS(ON) less than 4.8mΩ at VGS = 10V, PDFN3x3-8L package, suitable for load switch and power management applications. |
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JMTQ3010D
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 22A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 13.5mΩ at VGS=10V and low gate charge, suitable for load switching, PWM, and power management applications. |
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JMTQ3006B
