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N44
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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N44.65 Package
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Intersil
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44 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE |
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12.97KB |
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1N4490
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4467
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4448WS
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SUNMATE electronic Co., LTD
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Surface mount fast switching diode 1N4448WS in SOD-323 package features 100 V peak reverse voltage, 500 mA forward current, 4.0 ns reverse recovery time, and 4.0 pF junction capacitance, suited for general purpose switching applications. |
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1N4448WS
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JCET Group
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Fast switching diode in SOD-323 surface mount package, with 100V peak reverse voltage, 500mA forward current, 4ns reverse recovery time, and 200mW power dissipation. |
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2N4401
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JCET Group
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NPN transistor in TO-92 package with 40V collector-emitter voltage, 600mA continuous collector current, 0.625W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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1N4463
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4449
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SUNMATE electronic Co., LTD
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Silicon epitaxial planar small signal switching diodes in DO-35 glass case, featuring fast switching speed, with peak reverse voltage from 30 to 100V, average rectified current up to 200mA, and low forward voltage drop.Small signal switching diodes in DO-35 glass case, featuring fast switching speed, with peak reverse voltage from 30 to 100V, average rectified current up to 200mA, and low forward voltage drop, suitable for general-purpose switching applications. |
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1N4472
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4473
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA. |
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1N4476
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and operating junction temperature from -65 to +175°C.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA. |
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1N4489
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4448WS
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Shikues Semiconductor
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1N4464
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and operating junction temperature from -65 to +175°C. |
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1N4481
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4448W
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Shenzhen Heketai Electronics Co Ltd
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1N4448W switching diode in SOD-123 package features 75 V DC blocking reverse voltage, 500 mA forward current, 4 ns reverse recovery time, and 500 mW power dissipation, suitable for general purpose high-speed switching applications. |
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1N4448
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SUNMATE electronic Co., LTD
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1N4448 fast switching diode in DO-35 glass package, with 100 V repetitive peak reverse voltage, 2 A peak forward surge current, 300 mA forward current, and 8 ns reverse recovery time, suitable for general purpose rectification. |
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1N4448WT
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JCET Group
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Fast switching diode in SOD-523 surface mount package, with 75 V peak repetitive reverse voltage, 500 mA forward current, 4 ns reverse recovery time, and low reverse current, suitable for high-speed applications. |
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1N4477
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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1N4490
