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L230
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General Microcircuits
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High Current Drivers |
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124.29KB |
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L2301
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Endicott Research Group
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8m Class DC to AC Inverter |
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52.63KB |
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L2305
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Endicott Research Group
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8m Class DC to AC Inverter |
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93.6KB |
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L2306-125MG
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MF Electronics
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Thru-Hole/ Gull Wing, 3.3V 1 MHz to 100 MHz |
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137.04KB |
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L2308A
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Unknown
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IC Datasheet (Short Description and Cross Reference Only) |
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158.74KB |
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SL2302M
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SLKOR
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Surface Mount Package, N-Channel Switch, Low RDS(on), Low Logic Level Gate Drive, ESD Protected, 20V, 110mΩ@4.5V, 150mΩ@2.5V, 1.2A, SOT-723. |
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SL2309
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SLKOR
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VDS=-60V, ID=-1.6A, RDS(ON)<160mΩ @ VGS=-10V, <200mΩ @ VGS=-4.5V, PD=1.5W, TJ,TSTG=-55 to 150°C, RθJA=83.3°C/W. |
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SL2308
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SLKOR
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JMTL2302B
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Jiangsu JieJie Microelectronics Co Ltd
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20V, 3A N-channel Enhancement Mode Power MOSFET in SOT-23 package with RDS(ON) less than 61mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and lead-free construction. |
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JMTL2301E
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -20V drain-source voltage, -2A continuous drain current, and low RDS(ON) of 114mΩ at VGS = -4.5V, available in SOT-23 package. |
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SL2306
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SLKOR
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N-Channel Power MOSFET, BV DSS 20V, V GS +10V, I D 4A, I DM 15A, P D 1200mW, T J 150°C, T/t 260/10°C/S, T stg -55 to +150°C. |
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SL2301
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SLKOR
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P-Channel Power MOSFET, VDS=-20V, ID=-2.8A, RDS(ON)<120mΩ@VGS=-2.5V, <100mΩ@VGS=-4.5V, high power handling, lead-free, surface mount package. |
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SL2302S
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SLKOR
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SL2301S
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SLKOR
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JMTL2302C
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Jiangsu JieJie Microelectronics Co Ltd
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20V, 4A N-channel enhancement mode power MOSFET in SOT-23 package with RDS(ON) less than 29mΩ at VGS=4.5V and less than 35mΩ at VGS=2.5V, featuring advanced trench technology, low gate charge, and lead-free construction. |
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SL2302
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SLKOR
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VDS=20V, ID=2.8A, RDS(ON) <85mΩ @2.5V, <45mΩ @4.5V, high power, lead-free, SMT, load switch. |
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JMTL2305A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTL2305A in SOT-23 package, with -20V drain-source voltage, -4.1A continuous drain current, and RDS(on) less than 35mΩ at VGS=-4.5V. |
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JMTL2305B
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -12V drain-source voltage, -4.1A continuous drain current, and RDS(on) less than 36mΩ at VGS=-4.5V, available in SOT-23 package. |
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SL2309A
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SLKOR
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60V, 165mΩ@10V, -2.0A, VDS -60V, VGS ±20V, ID -2.0A, IDM -10A, PD 1.25W, RθJA 120°C/W, TJ,TSTG -55~+150°C. |
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CJL2301
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JCET Group
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Dual P-Channel TrenchFET MOSFET in SOT-23-6L package, 20V VDS, -2.3A continuous drain current, 90mΩ RDS(on) at -4.5V VGS, suitable for DC/DC converters and load switches in portable devices. |
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SL2302M
