-I-65 Search Results
-I-65 Datasheets (9)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| I652HLCG |
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BOX JNCTN CLR/GRY 17.8X16.3X11.2 | Original | 452.4KB | |||
| I652HLGG |
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BOX PLAS GRY 17.750""L X 16.270""W | Original | 452.4KB | |||
GPI65010DF56
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GaNPower | N-channel 650V 10A GaN Power HEMT in 5x6 DFN package with 120 mΩ RDS(on), 2.6 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. | Original | ||||
GPI65005DF
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GaNPower | N-channel 650V 5A GaN Power HEMT with 240 mΩ Rds(on) and 2.6 nC gate charge in a 5x6 mm DFN package, designed for high-frequency switching applications requiring low input capacitance and zero reverse recovery charge. | Original | ||||
GPI65007DF
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GaNPower | N-channel 650V 7A GaN Power HEMT in 5x6 DFN package with 170 mΩ Rds(on), 2.1 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. | Original | ||||
GPI65030DFN
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GaNPower | N-channel 650V 30A GaN Power HEMT in 8x8 DFN package with 55 mΩ Rds(on), 5.8 nC gate charge, and zero reverse recovery charge, suitable for high-frequency switching applications requiring high power density and efficiency. | Original | ||||
SLI65R090E7
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Maplesemi | 650V N-Channel Super-JMOSFET with 38A continuous drain current, 78mΩ typical RDS(on) at VGS = 10V, low gate charge of 52nC, and 100% avalanche tested for high reliability in switching power supplies. | Original | ||||
GPI6508DFIC
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GaNPower | 650V, 170 mΩ, 7.5A GaN Power IC in DFN5x6 package with integrated gate driver, featuring high dv/dt capability, low input capacitance, and fast switching for power adapters and switching power applications. | Original | ||||
GPI65015DFNL
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GaNPower | N-channel 650V 15A GaN Power HEMT in 8x8 DFN package with 85 mΩ Rds(on), 3.3 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. | Original |
-I-65 Price and Stock
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Rochester Electronics LLC IPI65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI65R150CFDXKSA1 | Tube | 17,598 | 167 |
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Buy Now | |||||
GaNPower GPI65007DF88GaNFET N-CH 650V 7A DFN8x8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GPI65007DF88 | Tape & Reel | 2,000 | 1 |
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Buy Now | |||||
Rochester Electronics LLC HMI-65262B-916K X 1 ASYNCHRONOUS CMOS SRAM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HMI-65262B-9 | Bulk | 609 | 28 |
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Buy Now | |||||
Rochester Electronics LLC IPI65R280C6XKSA1MOSFET N-CH 650V 13.8A TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI65R280C6XKSA1 | Bulk | 500 | 176 |
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Buy Now | |||||
Century Spring Corp II-65CSCOMP SPRING STEEL 0.875" 2.000" |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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II-65CS | Box | 262 | 1 |
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Buy Now | |||||