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H080XHXS
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Knowles Dielectric Labs
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Filters - RF Filters - HIGHPASS FILTER |
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JMSH0805PE
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Jiangsu JieJie Microelectronics Co Ltd
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80V 4.0mOhm N-Ch Power MOSFET in TO-220-3L and TO-263-3L packages with 154A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for motor driving, power tools, and DC/DC switching applications. |
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JMSH0803ME
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Jiangsu JieJie Microelectronics Co Ltd
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80V, 206A, 2.7mΩ N-channel Power SGT MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMSH0804NC
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Jiangsu JieJie Microelectronics Co Ltd
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80V, 160A N-channel Power MOSFET with 3.2mΩ typical RDS(ON) at 10V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high current capability, and 100% UIS and Rg tested performance. |
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JMSH0804NG
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Jiangsu JieJie Microelectronics Co Ltd
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85V N-channel Power MOSFET in PDFN5x6-8L package with 3.1mΩ RDS(ON) at 10V VGS, 137A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications. |
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JMSH0803MC
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Jiangsu JieJie Microelectronics Co Ltd
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80V, 162A, 3mΩ N-channel Power SGT MOSFET in TO-220-3L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. |
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JMSH0805PC
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Jiangsu JieJie Microelectronics Co Ltd
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80V 4.0mΩ N-Ch Power MOSFET in TO-220-3L and TO-263-3L packages, with 154A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power tools, e-vehicles, and power management applications. |
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JMSH0804NK
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Jiangsu JieJie Microelectronics Co Ltd
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85V N-channel Power MOSFET in TO-252-3L package with 3.3 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, low gate charge, and 100% UIS tested for power management applications. |
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JMSH0805PG
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Jiangsu JieJie Microelectronics Co Ltd
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80V N-channel Power MOSFET in PDFN5x6-8L package with 3.4 mΩ RDS(ON) at 10V VGS, 129A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and motor driving applications. |
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JMSH0802ME
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Jiangsu JieJie Microelectronics Co Ltd
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80V, 254A, 1.8mΩ N-channel Power SGT MOSFET in TO-263-3L package with low on-resistance, high continuous drain current, and optimized gate charge for power management and load switching applications. |
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JMSH0803NGS
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Jiangsu JieJie Microelectronics Co Ltd
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80V 3.2mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 153A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and motor driving applications. |
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JMSH0803AGS
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Jiangsu JieJie Microelectronics Co Ltd
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80V N-channel Power MOSFET with 3.2 mΩ typical RDS(ON) at 10V VGS, 153A continuous drain current, low gate charge, and 34nC total gate charge, housed in a PDFN5x6-8L package for high-efficiency power management applications. |
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JMSH0804NE
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Jiangsu JieJie Microelectronics Co Ltd
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80V 3.2mΩ N-Ch Power MOSFET in TO-220-3L and TO-263-3L packages, with 160A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power tools, e-vehicles, robotics, and power management applications. |
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JMSH0805PK
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Jiangsu JieJie Microelectronics Co Ltd
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80V N-channel Power MOSFET in TO-252-3L package with 3.7 mΩ RDS(ON) at 10V VGS, 130A continuous drain current, low gate charge, and 100% UIS tested for motor driving and power switching applications. |
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JMSH0805PE
