|
680KD07
|
|
YAGEO
|
MOV DISC 7MM, 68V 250A, BULK |
Original |
PDF
|
699.93KB |
13 |
|
680KD10
|
|
YAGEO
|
MOV |
Original |
PDF
|
721.94KB |
|
|
680KD14
|
|
YAGEO
|
MOV DISC 14MM,68V 1KA, BULK |
Original |
PDF
|
745.91KB |
13 |
|
680KD14J
|
|
YAGEO
|
MOV DISC 14MM,68V 2KA, BULK |
Original |
PDF
|
745.91KB |
13 |
|
680KD20
|
|
YAGEO
|
MOV DISC 20MM,68V 2KA, BULK |
Original |
PDF
|
717.4KB |
13 |
|
680KD20J
|
|
YAGEO
|
MOV DISC 20MM,68V 3KA, BULK |
Original |
PDF
|
717.4KB |
13 |
AK70T680K
|
|
AK Semiconductor
|
700 V, 7 A N-Channel Super Junction Power MOSFET with 680 mΩ RDS(ON), low gate charge, available in TO-251 and TO-252 packages for PFC and SMPS applications. |
Original |
PDF
|
|
|
|
NCE70T680K
|
|
NCEPOWER
|
NCE70T680I, NCE70T680K are 700V super junction power MOSFETs in TO-251 and TO-252 packages with typical RDS(ON) of 680 mΩ, low gate charge, and 100% avalanche tested for PFC, SMPS, and industrial power applications. |
Original |
PDF
|
|
|
|
NCE65T680K
|
|
NCEPOWER
|
NCE65T680I, NCE65T680K is a 650V N-channel super junction power MOSFET with trench gate technology, featuring 600 mΩ RDS(ON), low gate charge, and available in TO-251 and TO-252 packages. |
Original |
PDF
|
|
|
|
AK65T680K
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 7 A continuous drain current, 600 mΩ typical RDS(ON), and ultra-low gate charge in TO-251 or TO-252 package. |
Original |
PDF
|
|
|
AK70T680K
