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-65/G Datasheets (30)

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Part	Manufacturer	Description	Datasheet Type	PDF
MSP04065G1	Maplesemi	650V silicon carbide Schottky diode with 4.8A continuous forward current, fast switching, low forward voltage of 1.8V at 4A, and operating junction temperature up to 175°C, suitable for high-frequency power applications.	Original	PDF
MSM06065G1	Maplesemi	650V silicon carbide Schottky diode with 6A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency applications.	Original	PDF
MS2TH32065G1	Maplesemi	650V Silicon Carbide Schottky diode with 32A continuous forward current, 1.8V typical forward voltage at 16A and 25°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved thermal stability.	Original	PDF
MS2H40065G1	Maplesemi	650V silicon carbide Schottky rectifier diode with 20A continuous forward current per leg, fast switching, low forward voltage of 1.85V typical at 20A, and operating junction temperature up to 175°C.	Original	PDF
NCE3065G	NCEPOWER	NCE3065G is a channel enhancement mode power MOSFET with 30V drain-source voltage, 65A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, housed in a DFN5x6-8L package.	Original	PDF
MSP02065G1	Maplesemi	650V silicon carbide Schottky diode with continuous forward current of 2.1A at 150°C, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package.	Original	PDF
MSD02065G1	Maplesemi	650V Silicon Carbide Schottky Diode with 2.1A continuous forward current, 14A surge current, fast switching, positive temperature coefficient, and low thermal resistance of 3.22 C/W for high-efficiency power applications.	Original	PDF
NCE6065G	NCEPOWER	60V, 65A NCE6065G DFN5X6-8L power MOSFET with advanced trench technology, RDS(ON) less than 6.3 mΩ at VGS = 10V, low gate charge, and high current capability for load switching and PWM applications.	Original	PDF
MSNP06065G1	Maplesemi	650V Silicon Carbide Schottky diode with continuous forward current of 6A at 135°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved efficiency and thermal stability.	Original	PDF
MSP16065G1	Maplesemi	650V silicon carbide Schottky diode with 16A continuous forward current, extremely fast switching, temperature-independent behavior, positive temperature coefficient on VF, and high-frequency operation capability in a TO-220-2L package.	Original	PDF
MSD04065G1	Maplesemi	650V Silicon Carbide Schottky diode with 4.8A continuous forward current, featuring high-speed switching, low forward voltage of 1.65V at 4A, and operating junction temperature up to 175°C in a TO-252 package.	Original	PDF
HCKW75N65GH2	VANGUARD	650V 75A IGBT with Trench-FS technology, low Vce(sat) of 1.80V at 25°C, integrated SiC diode, TO-247 package, suitable for high-frequency switching applications.	Original	PDF
MS2H16065G1	Maplesemi	650V Silicon Carbide Schottky diode with 8A continuous forward current, extremely fast switching, positive temperature coefficient on VF, and high-frequency operation capability in a TO-247-3L package.	Original	PDF
MSH20065G1	Maplesemi	650V silicon carbide Schottky diode with 20A continuous forward current, ultrafast switching, high-frequency operation, positive temperature coefficient on VF, and low capacitive charge of 65nC at 400V.	Original	PDF

MSF16065G1	Maplesemi	650V silicon carbide Schottky diode with 16A continuous forward current, featuring high-speed switching, temperature-independent behavior, and positive temperature coefficient on VF, housed in a TO-220F-2 lead package.	Original	PDF
MSNP10065G1	Maplesemi	650V silicon carbide Schottky diode with 10A continuous forward current, fast switching, high-frequency operation, positive temperature coefficient on VF, and low thermal resistance of 2.1 °C/W.	Original	PDF
MSL06065G1	Maplesemi	650V Silicon Carbide Schottky Diode with continuous forward current up to 6A, fast switching, high-frequency operation, and operating junction temperature from -55 to +175°C in a DFN 8x8 package.	Original	PDF
MSP20065G1	Maplesemi	650V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package.	Original	PDF
MSD10065G1	Maplesemi	650V silicon carbide Schottky diode with 10A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency and high-efficiency power applications.	Original	PDF
MS2TH40065G1	Maplesemi	650V silicon carbide diode with continuous forward current up to 40A, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved efficiency and thermal stability.	Original	PDF

-65/G Price and Stock

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Taiwan Semiconductor TSCDM10065G1 10A, 650V, SIC SCHOTTKY DIODE, T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	TSCDM10065G1	Digi-Reel	2,500		1	1 $2.96 10 $1.92 100 $1.32 1000 $1.10 10000 $1.10	Buy Now
	TSCDM10065G1	Cut Tape	2,500		1	1 $2.96 10 $1.92 100 $1.32 1000 $1.10 10000 $1.10	Buy Now
	TSCDM10065G1	Tape & Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.90	Buy Now
Taiwan Semiconductor TSCDK10065G1 10A, 650V, SIC SCHOTTKY DIODE, T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	TSCDK10065G1	Cut Tape	800		1	1 $3.43 10 $2.24 100 $1.56 1000 $1.56 10000 $1.56	Buy Now
	TSCDK10065G1	Digi-Reel	800		1	1 $3.43 10 $2.24 100 $1.56 1000 $1.56 10000 $1.56	Buy Now
STMicroelectronics STPSC12065G2-TR DIODE SIL CARBIDE 650V 12A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STPSC12065G2-TR	Digi-Reel	742			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	STPSC12065G2-TR	Cut Tape	742		1	1 $4.58 10 $3.02 100 $2.14 1000 $1.77 10000 $1.77	Buy Now
STMicroelectronics	STPSC12065G2-TR		1,230		1	1 $4.48 10 $2.97 100 $2.11 1000 $1.82 10000 $1.82	Buy Now
Rochester Electronics	STPSC12065G2-TR		3,000		1	1 - 10 - 100 $2.04 1000 $1.83 10000 $1.72	Buy Now
SMC Diode Solutions S6D06065G DIODE SIL CARB 650V 25A TO2632
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	S6D06065G	Cut Tape	740		1	1 $1.49 10 $0.94 100 $0.63 1000 $0.63 10000 $0.63	Buy Now
	S6D06065G	Digi-Reel	740		1	1 $1.49 10 $0.94 100 $0.63 1000 $0.63 10000 $0.63	Buy Now
ROHM Semiconductor RGWX5TS65GC13 IGBT TRENCH FS 650V 132A TO247GE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGWX5TS65GC13	Tube	585		1	1 $7.72 10 $5.24 100 $5.24 1000 $3.27 10000 $3.27	Buy Now

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-65/G Search Results

-65/G Datasheets (30)

-65/G Price and Stock

Taiwan Semiconductor TSCDM10065G1

Taiwan Semiconductor TSCDK10065G1

STMicroelectronics STPSC12065G2-TR

SMC Diode Solutions S6D06065G

ROHM Semiconductor RGWX5TS65GC13