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    -60----I- Search Results

    -60----I- Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    60I
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 33.77KB 1
    60INCH-D1-P4V-MINI
    		All Sensors Pressure Sensor: Miniature Amplified Low Pressure Sensors Original PDF 108.55KB 6
    60INCH-Dx-P4V-MINI
    		All Sensors Pressure Sensor: Miniature Amplified Low Pressure Sensors Original PDF 108.55KB 6
    badge HPM6360IPA
    		HPMicro Semiconductor Co Ltd 32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz振荡器, 2XPI, DRAM, SDIO, 2I2S, PDM, 2PWM, 5定时器, 9UART, USB 2.0 OTG, 百兆以太网, 2CAN, 3ADC, 12位DAC, 108GPIO, AES, SM2/3/4, SHA, TRNG. Original PDF
    badge NCE65T260I
    		NCEPOWER NCE65T260I and NCE65T260K are 650V N-channel super junction power MOSFETs with low on-resistance of 220 mΩ, continuous drain current of 15 A, and low gate charge, available in TO-251 and TO-252 packages. Original PDF
    badge NCE70T260I
    		NCEPOWER NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs with low on-resistance of 260 mΩ typical, advanced trench gate technology, ultra-low gate charge, and 100% avalanche tested for high reliability in SMPS, PFC, and industrial applications. Original PDF
    badge AK65T260I
    		AK Semiconductor N-Channel Super Junction Power MOSFET AK65T260K with 650 V drain-source voltage, 15 A continuous drain current, 220 mΩ typical RDS(ON), and low gate charge for high-efficiency power conversion applications. Original PDF
    badge HPM6E60IGN
    		HPMicro Semiconductor Co Ltd 双核32位RISC-V，2080KB SRAM，千兆以太网，4个PWM模块，17个UART，4个ADC，206个GPIO，AES-128/256，SM2/3/4，SHA-1/256。 Original PDF
    badge HPM6260IEP
    		HPMicro Semiconductor Co Ltd 双核32位RISC-V，800KB SRAM，4096位OTP，128KB BOOT ROM，24/32768Hz振荡器，XPI，2高分辨率PWM，5组32位定时器，9UART，3ADC，108GPIO，AES-128/256，SM2/3/4，SHA-1/256，真随机数。 Original PDF
    badge AK65T360I
    		AK Semiconductor N-Channel Super Junction Power MOSFET AK65T360K with 650 V drain-source voltage, 11.5 A continuous drain current, 290 mΩ typical on-resistance, and low gate charge for high-efficiency power conversion applications. Original PDF
    badge HPM6360IEP
    		HPMicro Semiconductor Co Ltd 32位RISC-V, 800KB SRAM, 4096位OTP, 128KB BOOT ROM, 24/32768Hz晶体, 2XPI, DRAM, SDIO, 2I2S, PDM, 2PWM, 5定时器, 9UART, USB 2.0 OTG, 百兆以太网, 2CAN, 3ADC, 12位DAC, 108GPIO, AES, SM2/3/4, SHA, 真随机数, NOR解密 Original PDF
    badge JST60IS-1200BW
    		Jiangsu JieJie Microelectronics Co Ltd 60A TRIAC with 1200V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation for inductive loads and 2500 VRMS insulation rating. Original PDF
    badge AK70T360I
    		AK Semiconductor N-Channel Super Junction Power MOSFET AK70T360K with 700 V drain-source voltage, 11.5 A continuous drain current, 330 mΩ on-resistance, and low gate charge, suitable for PFC, SMPS, and industrial power applications. Original PDF
    badge HPM6E60IVM
    		HPMicro Semiconductor Co Ltd 双核32位RISC-V，2080KB SRAM，千兆以太网，4ADC，206GPIO，AES/SM2/SM3/SM4/SHA-1/256加密，真随机数。 Original PDF
    badge JST60IS-1600BW
    		Jiangsu JieJie Microelectronics Co Ltd 60A TRIAC with 1600V repetitive peak off-state voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation for inductive loads and 2500 VRMS rated insulation voltage. Original PDF
    badge XL-7060IR-T6A3
    		XINGLIGHT 42mil*42mil, 940nm, silica gel, 7060 bracket, ROHS, MSL 2a-3, EIA, reflow soldering, endoscope, oximeter, remote, camera, counters, thermal, smart meter, photoelectric, wireless, signal, car, robot. Original PDF
    badge NCE70T360I
    		NCEPOWER NCE70T360K and NCE70T360I are 700V N-channel super junction power MOSFETs with low on-resistance of 330 mΩ typical, 11.5A continuous drain current, and low gate charge, available in TO-252 and TO-251 packages respectively. Original PDF
    badge HPM6260IPA
    		HPMicro Semiconductor Co Ltd 双核32位RISC-V，800KB SRAM，24MHz振荡器，9 UART，3 ADC，108 GPIO，AES-128/256，SM2/3/4，SHA-1/256。 Original PDF
    badge NCE65T360I
    		NCEPOWER NCE65T360K and NCE65T360I are 650V N-channel super junction power MOSFETs with low RDS(ON) of 290mΩ, 11.5A continuous drain current, low gate charge, and high avalanche capability in TO-252 and TO-251 packages. Original PDF
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    -60----I- Price and Stock

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    Microchip Technology Inc 25LC160-I-SN

    IC EEPROM 16KBIT SPI 2MHZ 8SOIC
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    DigiKey 25LC160-I-SN Tube 765 1
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    KEMET Corporation R60IN41004030K

    CAP FILM 1UF 10% 250VDC RADIAL
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    DigiKey R60IN41004030K Bulk 450 1
    • 1 $1.23
    • 10 $0.80
    • 100 $0.58
    • 1000 $0.46
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    Microchip Technology Inc 25LC160-I-P

    IC EEPROM 16KBIT SPI 2MHZ 8DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 25LC160-I-P Tube 239 1
    • 1 $1.25
    • 10 $1.25
    • 100 $1.18
    • 1000 $1.18
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    KEMET Corporation R60IN4220DQ30J

    CAP FILM AUTOMOTIVE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R60IN4220DQ30J Ammo Pack 235 235
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    • 1000 $0.88
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    EPIGAP OSA Photonics OCI-460-ID1200-XS-T

    SWIR EMITTER 1200 NM SMD SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OCI-460-ID1200-XS-T 50 1
    • 1 $40.84
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    • 100 $29.17
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