B5819W
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier B5819W with 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-123 surface mount package for low voltage, high frequency applications. |
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AD-B5819W
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JCET Group
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Schottky barrier diode in SOD-123 package, AEC-Q101 qualified, with reverse voltage ratings of 20V, 30V, and 40V for AD-B5817W, AD-B5818W, and AD-B5819W respectively, 1A forward current, and low forward voltage drop. |
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1N5819WS
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20V to 40V maximum DC blocking voltage, 1.0A average forward rectified current, and operating temperature range from -50 to +125°C. |
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B5819WT
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Shenzhen Heketai Electronics Co Ltd
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B5819WT Schottky barrier diode in SOD-523 package features 40 V peak repetitive reverse voltage, 350 mA forward current, low forward voltage drop, low reverse capacitance of 50 pF, and fast recovery time of 10 ns. |
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B5819WSE
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Shikues Semiconductor
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40V, 1.0A, Low VF, SOD-323HE, 5.4mg, for low voltage, high frequency inverters. |
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B5819WS
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier with 20 V to 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-323 surface mount package. |
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B5819W
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Shikues Semiconductor
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1N5819WS
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SUNMATE electronic Co., LTD
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Schottky barrier diode 1N5819WS in SOD-323 package features 40V peak repetitive reverse voltage, 350mA forward continuous current, low forward voltage drop, low capacitance of 50pF, and fast reverse recovery time of 10ns. |
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B5817W Thru B5819W
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CREATEK Microelectronics
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Schottky barrier diode in SOD-123 package with reverse voltage ratings of 20V, 30V, and 40V for B5817W, B5818W, and B5819W respectively, 1A average rectified current, low forward voltage drop, and 500mW power dissipation. |
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B5819W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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B5819WL
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Shikues Semiconductor
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Metal silicon junction, guarding, low power loss, high efficiency, high current, low forward voltage, high surge capability. |
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1N5819WS
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AK Semiconductor
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Schottky barrier diode in SOD-323 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817WS, 1N5818WS, and 1N5819WS respectively. |
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B5819WS
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JCET Group
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Schottky barrier diode in SOD-323 package, rated for 20V to 40V peak reverse voltage, 1A average rectified current, 1.5A repetitive peak forward current, and 250mW power dissipation. |
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1N5819W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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1N5819W
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier with 20 V, 30 V, or 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-123FL surface mount package. |
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B5819W SL
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JCET Group
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Schottky barrier diode in SOD-123 package, rated for 20V to 40V peak reverse voltage, 1A average rectified current, 500mW power dissipation, with low forward voltage and fast switching for high frequency applications. |
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B5819WS
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Shikues Semiconductor
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B5819W
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AK Semiconductor
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Schottky barrier rectifier in SOD-123 package with reverse voltage ratings of 20 to 40 V, forward current rating of 1 A, low forward voltage drop, and high surge current capability up to 25 A. |
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B5819WT
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SLKOR
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Low VF, guard ring, low trr, low Cd. VR 40 V, IF 350 mA, Ptot 400 mW, Tj 125 °C, VF 0.37-0.60 V, IR 5.0 μA, Cd 50 pF, trr 10 ns. SOD-523. |
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B5819W
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JCET Group
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Schottky barrier diode in SOD-123 package, rated for 20V to 40V peak repetitive reverse voltage, 1A average rectified current, 500mW power dissipation, with low forward voltage and 120pF typical capacitance. |
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