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52B13-200
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13-250
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13-3
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13-350
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-200
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-200
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Seeq Technology
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Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-250
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-250
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Seeq Technology
|
Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
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52B13/H-350
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Seeq Technology
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2K x 8 nMOS EPROM Memory |
Scan |
PDF
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80.29KB |
2 |
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52B13H-350
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Seeq Technology
|
Electrically Erasable ROM |
Scan |
PDF
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531.36KB |
2 |
BZT52B15S
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JCET Group
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SOD-323 surface-mount Zener diode with planar die construction, available in lead-free version, 200 mW power dissipation, and zener voltage range from 2.4V to 39V, suited for automated assembly processes. |
Original |
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BZT52B10BS
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SLKOR
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400mW, 3.0 to 51 Volts, ±2% Vz Tolerance, -55°C to +150°C, 313°C/W, SOD-323, Halogen Free, RoHS, UL 94 V-0. |
Original |
PDF
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BZT52B13
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Shikues Semiconductor
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Plastic-Encapsulate Diodes: Planar Die, 500mW on Ceramic PCB, General Purpose, Lead Free. |
Original |
PDF
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AD-BZT52B18S
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JCET Group
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AD-BZT52B*S series Zener diodes in SOD-323 package feature planar die construction, 200 mW power dissipation, AEC-Q101 qualification, and operating junction temperature from -55 to 150 °C. |
Original |
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BZT52B13S
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JCET Group
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SOD-323 surface-mount Zener diode with planar die construction, available in lead-free version, 200 mW power dissipation, and zener voltage range from 2.4V to 39V, suited for automated assembly processes. |
Original |
PDF
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BZT52B18
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Shikues Semiconductor
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Total power dissipation: Max. 500mW. Zener reverse voltage: 2.0V to 75V. SOD-123 package. Tolerance ±2%. |
Original |
PDF
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BZT52B11S
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JCET Group
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Planar die Zener diode in SOD-323 package, 200 mW power dissipation, 2.4V to 39V zener voltage range, low forward voltage of 0.9V at 10mA, suitable for automated assembly and general purpose medium current applications.Planar die zener diode in SOD-323 package, general purpose medium current type, available lead free, 200 mW power dissipation, junction temperature range -55 to +150°C. |
Original |
PDF
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BZT52B16
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JCET Group
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SOD-123 Zener diode with planar die construction, 500 mW power dissipation, and zener voltage range from 2.4 V to 43 V, suited for automated assembly and general purpose medium current applications. |
Original |
PDF
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BZT52B15
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Zener diodes in SOD-123 package, 500mW power rating, voltage range 5.1V to 43V with ±2% tolerance, low zener impedance, designed for voltage regulation and clamping applications. |
Original |
PDF
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BZT52B10
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Zener diodes in SOD-123 package, 500mW power rating, voltage range 5.1V to 43V with ±2% tolerance, low zener impedance, designed for stabilization and clamping circuits. |
Original |
PDF
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BZT52B15S
