Datasheet Archive: -430A/Â datasheets

-430A/Â Result Highlights (5)

Part	Manufacturer	Description	Download
TK430A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 13 A, 0.43 Ohm@10V, TO-220SIS	Datasheet
922-430A-F3H	Amphenol Communications Solutions	XCede HD, Backplane Connectors, Right Angle Header HSD, 4-pair, 6-column, 100ohms.	PDF
915-430A-F0H	Amphenol Communications Solutions	XCede HD Plus, Backplane Connectors, Right Angle Receptacle With Extra Ground, 4-pair, 8-column, 100ohms.	PDF
MSP430AFE221IPW	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 4KB Flash, 256B RAM, 1x SD24 24-TSSOP -40 to 85
MSP430AFE251IPW	Texas Instruments	16-bit Ultra-Low-Power Microcontroller, 16KB Flash, 512B RAM, 1x SD24 24-TSSOP -40 to 85

-430A/Â Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
CWS70R430AF	Wuhan Xinyuan Semiconductor Co Ltd	700V, 30A N-Channel Super Junction MOSFET with 430 mΩ RDS(on), designed for high-efficiency power applications including PFC, SMPS, UPS, and LED lighting, available in TO-220, TO-220F, and TO-247 packages.	Original	PDF
JMH70R430AF	Jiangsu JieJie Microelectronics Co Ltd	700V 11A N-Channel Power MOSFET in TO-220FP-3L package with 350mW typical RDS(ON) at 10V VGS, low gate charge, and fast switching capability for telecom, industrial, and power supply applications.	Original	PDF
JMH65R430AF	Jiangsu JieJie Microelectronics Co Ltd	650V SuperJunction Power MOSFET in TO-220FP-3L package with 364 mΩ RDS(ON) at 10V VGS, 11.2A continuous drain current, low gate charge, and fast switching capability for industrial, telecom, and power supply applications.	Original	PDF
JMH70R430AK	Jiangsu JieJie Microelectronics Co Ltd	700V 12A N-Ch Power MOSFET in TO-252-3L package with 352mΩ typical RDS(ON) at 10V VGS, featuring low gate charge, fast switching, and rugged dv/dt performance for industrial and power supply applications.	Original	PDF
CWS70R430ADR	Wuhan Xinyuan Semiconductor Co Ltd	700V, 30A N-Channel Super Junction MOSFET with 430 mΩ RDS(on), designed for high-efficiency power applications including PFC, SMPS, UPS, and LED lighting, available in TO-220, TO-220F, and TO-247 packages.	Original	PDF
JMH65R430APLN	Jiangsu JieJie Microelectronics Co Ltd	650V SuperJunction Power MOSFET in DFN8080-4L package with 370 mΩ RDS(ON) at 10V VGS, 10.4A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications.	Original	PDF
JMH65R430ACFP	Jiangsu JieJie Microelectronics Co Ltd	650 V, 11.2 A superjunction power MOSFET in a TO-220FP-NL package with 364 mΩ typical RDS(ON) at 10 V VGS, low gate charge, and fast switching capability for industrial, telecom, and power supply applications.	Original	PDF
JMH65R430AE	Jiangsu JieJie Microelectronics Co Ltd	650 V, 11.2 A superjunction power MOSFET in TO-263-3L package with 430 mΩ RDS(ON) at 10 V VGS, featuring low gate charge, fast switching, and avalanche current rating of 6 A.	Original	PDF

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Infineon Technologies AG IPD5N25S3430ATMA1 MOSFET N-CH 250V 5A TO252-3
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TE Connectivity 3430A3F3R0TDF 3430 A3 1% 3R0 200PPM 1K RL
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TE Connectivity 3430A2F180KTDF 3430 A2 1% 180K 100PPM 1K RL
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	3430A2F180KTDF	Cut Tape	2,000		1	1 $0.19 10 $0.09 100 $0.05 1000 $0.04 10000 $0.04	Buy Now
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TE Connectivity 3430A3F390KTDF 3430 A3 1% 390K 100PPM 1K RL
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TE Connectivity 3430A2F8R2TDF 3430 A2 1% 8R2 150PPM 1K RL
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