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40P03
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Kexin
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P-Channel Enhancement MOSFET |
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AK40P06S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK40P06S with -40V drain-source voltage, -6A continuous drain current, and 45mΩ RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. |
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NCE40P07S
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NCEPOWER
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NCE40P07S is a P-channel enhancement mode power MOSFET with -40V drain-source voltage, -6.2A continuous drain current, and low on-resistance of 25mΩ at VGS=-10V, suitable for switching applications and DC-DC converters. |
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AKZE40P03
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AK Semiconductor
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P-Channel 30-V MOSFET with -40A continuous drain current, 0.018 ohm RDS(on) at VGS = -10V, 13nC gate charge, suitable for load and battery switch applications, in TO-252 package. |
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JMTP440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTP440P04A in SOP-8 package, rated for -40V drain-source voltage, -6A continuous current, with RDS(ON) less than 38mΩ at VGS = -10V and low gate charge. |
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NCE40P05Y
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE40P05Y with -40V drain-source voltage, -5.3A continuous drain current, 85mΩ RDS(ON) at VGS=-10V, and 125mΩ at VGS=-4.5V, housed in SOT-23-3L package. |
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AK40P05S
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AK Semiconductor
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AK40P05S P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -5.3A continuous drain current, 80mΩ typical RDS(ON) at VGS=-10V, and 120mΩ maximum RDS(ON) at VGS=-4.5V, housed in SOP-8 package. |
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CJU40P03
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JCET Group
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P-Channel Power MOSFET in TO-252-2L package with -30V drain-source voltage, -40A continuous drain current, and 10mΩ typical on-resistance at -10V gate-source voltage. |
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NCE40P06S
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. |
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CJU40P04A
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JCET Group
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P-Channel Power MOSFET CJU40P04A in TO-252-2L package featuring -40V drain-source voltage, -40A continuous drain current, and 15mΩ typical RDS(on) at VGS=-10V, designed for power management and battery-powered systems. |
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AK40P05Y
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AK Semiconductor
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AK40P05Y P-Channel Enhancement Mode MOSFET with -40V drain-source voltage, -5.3A continuous drain current, RDS(ON) less than 85mΩ at VGS=-10V, and low gate charge for power switching and DC-DC converter applications. |
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JMTQ440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTQ440P04A with -40V drain-to-source voltage, -8A continuous drain current, and RDS(ON) less than 36mΩ at VGS = -10V, housed in a PDFN3x3-8L package. |
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AK40P07S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK40P07S with -40V drain-source voltage, -6.2A continuous drain current, RDS(ON) less than 25mΩ at VGS=-10V, housed in SOP-8 package for efficient power switching and DC-DC conversion applications. |
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JMTK440P04A
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Jiangsu JieJie Microelectronics Co Ltd
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JMTK440P04A P-channel enhancement mode power MOSFET with -40V drain-source voltage, -10A continuous drain current, 39mΩ RDS(ON) at VGS = -10V, and TO-252-3L package. |
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SKQ40P02AD
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Shikues Semiconductor
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20V P-Channel MOSFET, RDS(ON)=6mΩ@VGS=-4.5V, 7.5mΩ@VGS=-2.5V, Power Management in Notebooks, Portable Equipment, Battery Systems. |
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NCE40P06J
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NCEPOWER
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P-Channel MOSFET with -40V drain-source voltage, -6A continuous drain current, RDS(ON) less than 33mΩ at VGS=-2.5V, advanced trench technology, low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package. |
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JMTP340P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTP340P03A in SOP-8 package, -30V, -7A, with RDS(ON) less than 25.6mΩ at VGS = -10V, suitable for load switching and power management applications. |
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JMTK340P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTK340P03A in TO-252-3L package with -30V drain-source voltage, -20A continuous drain current, and low on-resistance of 26.8mΩ at VGS = -10V. |
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SLN40P04T
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Maplesemi
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P-Channel MOSFET with -40V drain-source voltage, -40A continuous drain current, 10.5mΩ typical RDS(on) at VGS = -10V, housed in a DFN3x3 package, suitable for PWM, load switch, and power management applications. |
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NCE40P05S
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -40V drain-source voltage, -5.3A continuous drain current, 80mΩ RDS(ON) at VGS=-10V, and 120mΩ at VGS=-4.5V, housed in SOP-8 package. |
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AK40P06S
