|
302B
|
|
Unknown
|
The Hybrid OP AMP Data Book (Japanese) |
Scan |
PDF
|
27.71KB |
1 |
AK2302B
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET AK2302B with 20V drain-source voltage, 3.3A continuous drain current, RDS(ON) less than 60mΩ at VGS=2.5V, and low gate charge for battery protection and switching applications in SOT-23 package. |
Original |
PDF
|
|
|
|
HSS2302B
|
|
Huashuo Semiconductor
|
N-Ch 20V Fast Switching MOSFET with 3 A continuous drain current, 46 mΩ typical RDS(ON) at VGS = 4.5V, low gate charge, and SOT-23 package for small power switching applications. |
Original |
PDF
|
|
|
|
SL-302B
|
|
SLKOR
|
Max Input Voltage 5V, Max Input Power 750mW, Operating Temp -40 to +125°C, Storage Temp -45 to +150°C, Hall Voltage 650-850mV. |
Original |
PDF
|
|
|
|
SMH302B
|
|
SUNMATE electronic Co., LTD
|
Surface mount ultra-fast rectifier diodes in SMB/DO-214AA package, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated junction, designed for high-efficiency power rectification. |
Original |
PDF
|
|
|
|
JMTL2302B
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
20V, 3A N-channel Enhancement Mode Power MOSFET in SOT-23 package with RDS(ON) less than 61mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and lead-free construction. |
Original |
PDF
|
|
|
|
SMF302B
|
|
SUNMATE electronic Co., LTD
|
3.0A surface mount fast recovery rectifier diode with 50V to 1000V reverse voltage range, low forward voltage drop, fast recovery time of 50 to 500ns, and plastic package rated UL 94V-0. |
Original |
PDF
|
|
|
|
HFM302B
|
|
SUNMATE electronic Co., LTD
|
Surface mount high efficiency rectifier diodes in SMB/DO-214AA package, rated for 3.0A average forward current, with peak repetitive reverse voltage from 50 to 1000V, featuring low forward voltage drop and ultra-fast recovery time. |
Original |
PDF
|
|
|
|
NCE2302B
|
|
NCEPOWER
|
NCE2302B is an N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 3.3A continuous drain current, and low on-resistance of less than 60mΩ at 2.5V gate drive, suitable for battery protection and switching applications. |
Original |
PDF
|
|
|
|
SLV2302B
|
|
Maplesemi
|
N-Channel 20V MOSFET with 3.5A continuous drain current, RDS(on) of 34.5mΩ at VGS = 4.5V, low gate charge, and fast switching for power management and load switch applications in SOT-23 package. |
Original |
PDF
|
|
|
AK2302B
