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3003-A-080-AL
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN ALUMIN |
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131.67MB |
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3003-A-080-B
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN BRASS1 |
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131.67MB |
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3003-A-080-S
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN STEEL1 |
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131.67MB |
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3003-A-080-SS
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RAF Electronic Hardware
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ROUND SWAGE STANDOFFPLAIN STAINL |
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131.67MB |
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JMTC3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.3mΩ at VGS=10V, advanced trench technology, low gate charge, and TO-220C-3L package. |
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JMTE3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.9mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and TO-263-3L package. |
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JMTQ3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. |
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JMTK3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V, TO-252-3L package, designed for power management and load switching applications. |
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JMTG3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A N-channel enhancement mode power MOSFET with RDS(ON) less than 3.1mΩ at VGS=10V and 6.4mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN5x6-8L package. |
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JMTC3003A
