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30N03A
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UMW
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TO-252 MOSFETS ROHS |
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948.65KB |
6 |
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30N06
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Unisonic Technologies
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30 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
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154.83KB |
8 |
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30N06LE
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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34.6KB |
1 |
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30N06L-TA3-T
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Unisonic Technologies
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30 Amps, 60 Volts N-CHANNEL POWER MOSFET |
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PDF
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154.82KB |
8 |
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30N06-TA3-T
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Unisonic Technologies
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30 Amps, 60 Volts N-CHANNEL POWER MOSFET |
Original |
PDF
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154.82KB |
8 |
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30N06-TF3-T
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Unisonic Technologies
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30 Amps, 60 Volts N-CHANNEL POWER MOSFET |
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PDF
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154.82KB |
8 |
HSU30N02
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Huashuo Semiconductor
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N-Ch 20V Fast Switching MOSFET with 30A continuous drain current, 6.8 mΩ typical RDS(ON), low gate charge, and 40W power dissipation in TO252 package. |
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JMTP330N06D
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 5A, 32mΩ N-channel Power Trench MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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AKZE30N02
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AK Semiconductor
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N-Channel 20-V MOSFET with 100 A continuous drain current, 0.006 ohm typical rDS(on) at VGS = 4.5 V, TO-252 package, suitable for power management applications. |
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SLD130N04T
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Maplesemi
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N-channel MOSFET with 40V drain-source voltage, 130A continuous drain current, typical RDS(on) of 2.5mΩ at VGS = 10V, and low gate charge for fast switching in D-PAK package. |
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SLM130N04T
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Maplesemi
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40V N-Channel MOSFET with 130A continuous drain current, 2.0mΩ typical RDS(on) at VGS=10V, DFN5x6 package, suitable for PWM, load switch, and power management applications. |
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PDF
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SLD30N03T
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Maplesemi
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N-channel 30V 30A Power MOSFET with typical RDS(on) of 7.8 mΩ at VGS = 10 V, low Crss, fast switching, 100% avalanche tested, in D-Pak package. |
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SL30N06D
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SLKOR
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PDF
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SLN30N03T
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Maplesemi
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N-Channel MOSFET with 30V drain-source voltage, 30A continuous drain current, 6.0mΩ typical RDS(on) at VGS = 10V, in DFN3*3 package, suitable for power management and load switching applications. |
Original |
PDF
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AKZE30N06
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AK Semiconductor
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N-Channel 60-V TrenchFET Power MOSFET with 35 A continuous drain current, 0.025 ohm typical rDS(on) at VGS = 10 V, TO-252 package, rated for 175 °C junction temperature. |
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CJAB30N02
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JCET Group
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N-Channel Power MOSFET CJAB30N02 with 20V drain-source voltage, 30A continuous drain current, and ultra-low RDS(on) of 6.2mΩ at 4.5V VGS, housed in a PDFNWB3.3x3.3-8L package for high-density applications requiring efficient switching and thermal performance. |
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JMTQ130N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 20A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 19.2mΩ at VGS=10V and low gate charge, suitable for load switching, PWM, and power management applications. |
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JMTQ230N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 12A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 26mΩ at VGS=10V and low gate charge, suitable for load switch, PWM, and power management applications. |
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JMTK330N06A
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 20A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 33mΩ at VGS=10V and 45mΩ at VGS=4.5V, featuring advanced trench technology for low gate charge and high efficiency in power management applications. |
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HSU30N02
