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290A
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Intronics
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SP amplifier, Single channel |
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46.26KB |
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290A
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Analog Devices
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Modules-Subsystems Data Book 1984 |
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289KB |
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290AEX
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED CHAS MOUNT |
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290AX
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED CHAS MOUNT |
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AK8290AC
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK8290AC with 82V drain-source voltage, 90A continuous drain current, 12mΩ max RDS(ON) at 10V VGS, suitable for power switching and high frequency applications. |
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JMH65R290AE
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Jiangsu JieJie Microelectronics Co Ltd
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650 V, 12.0 A superjunction power MOSFET in TO-263-3L package with 290 mOhm typical RDS(on) at 10 V gate voltage, low gate charge, and fast switching capability for industrial, telecom, and power supply applications. |
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CWS65R290ADR
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Wuhan Xinyuan Semiconductor Co Ltd
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650V N-Channel Super Junction MOSFET with 290 mOhm RDS(on) and 15A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. |
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JMH65R290AF
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET with 260 mOhm RDS(ON) at 10V VGS, 12.0A continuous drain current, low gate charge, and TO-220FP-3L package for high-efficiency power applications. |
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JMH65R290APLN
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Jiangsu JieJie Microelectronics Co Ltd
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650V SuperJunction Power MOSFET in DFN8080-4L package with 290 mOhm RDS(on) at 10V VGS, 10A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. |
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VB2290A
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VBsemi Electronics Co Ltd
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P-Channel 20-V -4.0 A MOSFET with RDS(on) of 0.047 ohm at VGS = -10 V, available in SOT-23 package, featuring trench technology and low gate charge for power switching applications. |
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B290A
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SMA (DO-214AC) plastic case, rated for 2.0 A average rectified current, with repetitive reverse voltage range of 20 to 100 V, low forward voltage drop, and non-repetitive surge current up to 50 A. |
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AKP1290AK
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP1290AK with 120V drain-source voltage, 90A continuous drain current, 7.0mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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JMH65R290ACFP
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Jiangsu JieJie Microelectronics Co Ltd
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650 V, 12.0 A superjunction power MOSFET with 260 mOhm RDS(on) at 10 V VGS, TO-220FP-NL package, designed for high-efficiency power conversion applications. |
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AK8290AC
