|
24AF60DF10
|
|
Amperite
|
Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Flasher, 60 Flashes per minute, 24VAC Input voltage |
Scan |
PDF
|
104.56KB |
1 |
SK24AF
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 2.0 A average rectified current, 20 to 100 V DC blocking voltage, 0.55 to 0.85 V forward voltage at 2.0 A, and operating junction temperature from -65 to +125 °C. |
Original |
PDF
|
|
|
SL24AF
|
|
CREATEK Microelectronics
|
Surface Mount Schottky Rectifier Diode in SMAF package, 40V repetitive peak reverse voltage, 2.0A average forward rectified current, low forward voltage drop, suitable for low voltage high frequency inverters, free wheeling and polarity protection applications. |
Original |
PDF
|
|
|
NCE0224AF
|
|
NCEPOWER
|
NCE0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 62mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. |
Original |
PDF
|
|
|
SS24AF
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode in SMAF package, 2.0 A average forward current, 20 to 100 V repetitive peak reverse voltage, low forward voltage drop, suited for automatic assembly and low voltage applications.Surface mount Schottky barrier diode with 2.0 A forward current, 20 to 100 V repetitive peak reverse voltage, low forward voltage drop, and SMAF package for automatic assembly in low voltage applications.Surface mount Schottky barrier diode with 2.0 A forward current, 20 to 100 V reverse voltage range, low forward voltage drop, and SMAF package for surface mounting in low voltage applications. |
Original |
PDF
|
|
|
AK0224AF
|
|
AK Semiconductor
|
AK0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 80mΩ maximum RDS(ON) at 10V VGS, and 45W power dissipation in TO-220F package. |
Original |
PDF
|
|
|