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20N10
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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34.25KB |
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20N100
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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133.07KB |
1 |
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20N100D2
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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34.25KB |
1 |
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20N100E2
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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34.25KB |
1 |
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20N120E2
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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34.25KB |
1 |
JMTG320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. |
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PDF
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JMTQ320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. |
Original |
PDF
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SLP120N10G
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. |
Original |
PDF
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SLD20N15T
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Maplesemi
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N-channel 150V, 20A Power MOSFET with typical RDS(on) of 70 mΩ at VGS = 10 V, utilizing trench technology for low on-resistance and high switching performance in DC/DC and AC/DC converters. |
Original |
PDF
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SLB120N10G
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications. |
Original |
PDF
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CJAC20N10
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JCET Group
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CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications. |
Original |
PDF
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JMTC320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package. |
Original |
PDF
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IRC3020N13-B20
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CT Micro International Corporation
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SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 1.8 mW/sr at 20mA, viewing angle ±60 degrees, and RoHS compliant. |
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PDF
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NCEAP020N10LL
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NCEPOWER
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NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. |
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PDF
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HSU20N15
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Huashuo Semiconductor
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N-channel 150V MOSFET with 20A continuous drain current, 88mΩ typical RDS(on) at VGS=10V, TO252 package, suitable for high-density switching applications. |
Original |
PDF
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HSU20N15A
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Huashuo Semiconductor
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N-Ch 150V Fast Switching MOSFET with 23A continuous drain current, 47mΩ typical RDS(ON), 150V breakdown voltage, low gate charge, and advanced trench technology for high-efficiency synchronous buck converters. |
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PDF
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JMTK320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package. |
Original |
PDF
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HSBA20N15S
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Huashuo Semiconductor
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N-channel 150V fast switching MOSFET with 23A continuous drain current, 56mΩ max RDS(ON) at 10V VGS, low gate charge, and high cell density trench technology for synchronous buck converters. |
Original |
PDF
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JMTI320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. |
Original |
PDF
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SL20N10
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SLKOR
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Original |
PDF
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JMTG320N10A
