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15P2
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Unknown
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GE Transistor Specifications |
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26.79KB |
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15P2
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
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120.94KB |
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15P2
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Thomson-CSF
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Condensed Data Book 1977 |
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38.71KB |
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15P2
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Thomson-CSF
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Shortform Semiconductor Catalogue 1982 |
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116.31KB |
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NCE15P25JI
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NCEPOWER
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NCE15P25JI is a P-channel enhancement mode power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency. |
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AK15P25JI
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AK Semiconductor
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AK15P25JI P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, 135mΩ RDS(ON) at VGS=-10V, and TO-251 package. |
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AK15P25I
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AK Semiconductor
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AK15P25I P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, 135mΩ typical RDS(ON) at VGS=-10V, advanced trench technology, suitable for portable and battery-powered systems. |
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NCE15P25J
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NCEPOWER
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NCE15P25J is a P-channel enhancement mode power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency. |
Original |
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AK15P25J
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AK Semiconductor
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AK15P25J P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ typical at VGS=-10V, featuring advanced trench technology for high efficiency in portable and battery-powered applications. |
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AK15P25
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AK Semiconductor
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AK15P25 P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, and 140mΩ RDS(ON) at VGS=-10V, utilizing advanced trench technology for low on-resistance and high cell density. |
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NCE15P25JI
