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157A
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Advani-Oerlikon
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Silicon Transistor Guide |
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320.16KB |
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157A
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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78.91KB |
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157ALG035MFBJ
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Illinois Capacitor
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Capacitors - Aluminum - Polymer Capacitors - CAP ALUM POLY 150UF 20% 35V T/H |
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305.33KB |
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157ALG063MGBJ
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Illinois Capacitor
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Capacitors - Aluminum - Polymer Capacitors - CAP ALUM POLY 150UF 20% 63V T/H |
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305.33KB |
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157AVG025MFF
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Illinois Capacitor
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Capacitors - Aluminum - Polymer Capacitors - CAP ALUM POLY 150UF 20% 25V T/H |
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PDF
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322.92KB |
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157AVG035MFBJ
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Illinois Capacitor
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Capacitors - Aluminum - Polymer Capacitors - CAP ALUM POLY 150UF 20% 35V T/H |
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PDF
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322.92KB |
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157AVG063MGBJ
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Illinois Capacitor
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Capacitors - Aluminum - Polymer Capacitors - CAP ALUM POLY 150UF 20% 63V T/H |
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PDF
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322.92KB |
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157AXA
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AT&T Microelectronics
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157 High-Frequency ECL Voltage-Controlled Crystal Oscillator (VCXO) |
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141.23KB |
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157AXZ010M
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Illinois Capacitor
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AXZ +105°C Low Impedance Surface Mount Chip Aluminum Electrolytic Capacitors |
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66.09KB |
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157AXZ016M
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Illinois Capacitor
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AXZ +105°C Low Impedance Surface Mount Chip Aluminum Electrolytic Capacitors |
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PDF
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66.09KB |
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157AXZ035M
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Illinois Capacitor
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AXZ +105°C Low Impedance Surface Mount Chip Aluminum Electrolytic Capacitors |
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PDF
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66.09KB |
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157AXZ035MD8
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Illinois Capacitor
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AXZ +105°C Low Impedance Surface Mount Chip Aluminum Electrolytic Capacitors |
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PDF
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66.09KB |
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157AXZ050M
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Illinois Capacitor
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Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 150UF 20% 50V SMD |
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233.29KB |
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TPW3157A
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3peak Incorporated
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Low Voltage 5Ω SPDT Analog Switch |
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AK0157A
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK0157A with 100V drain-source voltage, 57A continuous drain current, and 17mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching performance. |
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NCE0157A2D
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NCEPOWER
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NCE0157A2D is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and ultralow RDS(ON) of 12.5mΩ typical at VGS=10V, designed for high-frequency switching and power applications. |
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NCE0157AK
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NCEPOWER
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NCE0157AK N-Channel Enhancement Mode MOSFET with 100V VDS, 57A ID, and 16mΩ RDS(ON) at 10V VGS, featuring high ESD capability, low gate charge, and TO-252-2L package for power switching applications. |
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NCE0157A2
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NCEPOWER
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NCE0157A2 is a Channel Enhancement Mode Power MOSFET with 100V VDS, 57A ID, and RDS(ON) less than 14.5mΩ at VGS=10V, using advanced trench technology for low gate charge and high efficiency in power switching applications. |
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NCE0157A
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NCEPOWER
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NCE0157A2 is a channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12.5mΩ at VGS=10V, suitable for high-frequency switching applications. |
Original |
PDF
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AK0157A2
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V VDS, 57A ID, and RDS(ON) of 14.5mΩ typical at VGS=10V, featuring high ESD capability, low gate charge, and 160W power dissipation in TO-220-3L package. |
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PDF
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TPW3157A
