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07S,AL
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Serpac Electronic Enclosures
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Boxes, Boxes, Enclosures, Racks, BOX SLANT ALM (6.88X4.88X1.88) |
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07S,BK
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Serpac Electronic Enclosures
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Boxes, Boxes, Enclosures, Racks, BOX SLANT BLK (6.88X4.88X1.88) |
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07-Series
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Advanced Technical Materials
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CONTINUOUSLY VARIABLE ATTENUATOR |
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671.93KB |
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07S,GY
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Serpac Electronic Enclosures
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Boxes, Boxes, Enclosures, Racks, BOX SLANT GRY (6.88X4.88X1.88) |
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07SR-3S
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JST Manufacturing
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Connector: Wire to Board Connector: RCP: 7: 1: IDT: SMD |
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117.79KB |
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0.7St60
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Unknown
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Cross Reference Datasheet |
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34.9KB |
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CL2207SL
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ChipLink Tech
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Primary-side controlled PWM controller with integrated 650V MOSFET, supporting high-precision constant voltage and constant current regulation for low-power AC/DC chargers and adapters. |
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DB207S
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Microdiode Semiconductor
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Single phase, glass passivated, voltage range 50-1000V, current 1.0A. |
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DB107S
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Shikues Semiconductor
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50-1000V, 1.0A, molded plastic, plated leads, polarity marked, any position, 0.02oz, 0.4g |
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DB107S
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SUNMATE electronic Co., LTD
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Glass passivated bridge rectifier DB101S-DB107S with 1.0A average forward current, 50 to 1000V repetitive peak reverse voltage, operating temperature from -55 to +150°C, suitable for surface mount and printed circuit board applications.Glass passivated bridge rectifier DB101S-DB107S with 1.0A average forward current, 50 to 1000V repetitive peak reverse voltage, operating temperature from -55 to +150C, suitable for surface mount and printed circuit board applications.Glass passivated bridge rectifier DB101S-DB107S with 1.0A average forward current, 50 to 1000V repetitive peak reverse voltage, operating temperature from -55 to +150C, suitable for surface mount PCB applications. |
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CJQ4407S
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JCET Group
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P-Channel MOSFET in SOP8 package with -30V drain-source voltage, -11A continuous drain current, and 15mΩ typical RDS(on) at -10V gate-source voltage. |
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DB207S
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SLKOR
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Surface mount, glass passivated. Reverse voltage 50-1000V, forward current 2.0A. Low forward voltage drop, high current, UL 94V-0. 0.38g. |
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FR07S4-32.768-N07LLDTD
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Hang Crystal International
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Tuning Fork Crystal FR07S4 in 7.0x1.5x1.4mm SMD resin mold package with J-leads, 32.768kHz fundamental frequency, ESR <65kΩ, load capacitance options of 7pF, 9pF, or 12.5pF, operating temperature –20 to +70°C or –40 to +85°C, suitable for low power applications. |
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DB201S thru DB207S
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CREATEK Microelectronics
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Single-phase bridge rectifier in DBS package with maximum repetitive peak reverse voltage from 50V to 1000V, 2A average forward output current, high surge current capability, and operating junction temperature range from -55 to +150°C. |
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FR07S4-32.768-NTLLLDTD
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Hang Crystal International
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Tuning Fork Crystal FR07S4 in 7.0x1.5x1.4mm SMD resin mold package with J-leads, 32.768kHz fundamental frequency, ESR <65kΩ, load capacitance options 7pF/9pF/12.5pF, ±20ppm frequency tolerance, operating temperature –20 to +70°C or –40 to +85°C.Tuning Fork Crystal FR07S4 in 7.0x1.5x1.4mm SMD resin mold package with J-leads, 32.768kHz fundamental frequency, ESR <65kΩ, load capacitance options of 7pF, 9pF, or 12.5pF, operating temperature –20 to +70°C or –40 to +85°C, suitable for low power applications. |
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DB207S
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JCET Group
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2A average rectified output current glass passivated bridge rectifier with repetitive peak reverse voltage from 50V to 1000V and 60A surge forward current capability suitable for general purpose applications |
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DB307S
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Microdiode Semiconductor
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single phase, glass passivated, voltage range 50 to 1000 volts, current 3.0 ampere. |
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DB207S
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Shenzhen Heketai Electronics Co Ltd
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Small surface mount bridge rectifier with repetitive peak reverse voltage from 50V to 1000V, mean rectifying current of 2.0A, low forward voltage drop, high surge current capability, and glass passivated die construction. |
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NCE3007S
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NCEPOWER
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NCE3007S is a -30V, -6.5A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 42mΩ at VGS=-10V and low gate charge, suitable for load switch and battery protection applications. |
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NCE40P07S
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NCEPOWER
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NCE40P07S is a P-channel enhancement mode power MOSFET with -40V drain-source voltage, -6.2A continuous drain current, and low on-resistance of 25mΩ at VGS=-10V, suitable for switching applications and DC-DC converters. |
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