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06-T001
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NTE Electronics
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TNC CRIMP PLUG FOR RG-59/62 CABL |
Original |
PDF
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34.53KB |
1 |
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06-T002
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NTE Electronics
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TNC CRIMP PLUG FOR RG-58/58A/141 |
Original |
PDF
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32.45KB |
1 |
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06-T004
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NTE Electronics
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TNC REVERSE POLARITY CRIMP PLUG |
Original |
PDF
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32.61KB |
1 |
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06-T005
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NTE Electronics
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TNC PLUG TO JACK R/A ADAPTER |
Original |
PDF
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30.36KB |
1 |
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06TDPS6
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A CHASSIS MOUNT |
Original |
PDF
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690.82KB |
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06TDPS6(D)
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A DIN RAIL |
Original |
PDF
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690.82KB |
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06T-JWPF-VSLE-D
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JST Manufacturing
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Cconnector HOUSING TAB JWPF 6POS 2MM |
Original |
PDF
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454.72KB |
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SLF80P06T
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Maplesemi
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P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. |
Original |
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SLD05P06T
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Maplesemi
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P-Channel 60V -5A MOSFET with RDS(on) of 82mΩ at VGS = -10V, featuring low on-resistance, fast switching, and 100% avalanche tested performance in a TO-252 package. |
Original |
PDF
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JECR7506TL
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Jiangsu JieJie Microelectronics Co Ltd
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EPI hyperfast soft recovery rectifier in TOLL package with 600V maximum repetitive peak reverse voltage, 75A average forward current, low reverse leakage, and hyperfast recovery time for applications in UPS, EV chargers, welding machines, and air conditioners. |
Original |
PDF
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SLM50N06T
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Maplesemi
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60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. |
Original |
PDF
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SDA06T1
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Leiditech
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SDA06T1 unidirectional TVS diode with 5V operating voltage, ultra low leakage in nA range, SOD-523 package, 200W peak pulse power (8/20 µs), and ±15kV ESD protection per IEC 61000-4-2. |
Original |
PDF
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SLB80N06T
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Maplesemi
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N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. |
Original |
PDF
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SL3906T
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SLKOR
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Original |
PDF
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SLP80N06T
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Maplesemi
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N-channel 60V 80A MOSFET with typical RDS(on) of 6.5 mΩ at VGS = 10V, designed for high-efficiency power management, load switching, and PWM applications. |
Original |
PDF
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PCR406-TA
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JCET Group
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406/PCR606 Controlled Rectifier with blocking voltage to 230V, phase control applications, general purpose switching, solid state relay integration, and temperature range specified for reliable operation. |
Original |
PDF
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SLM50D06T
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Maplesemi
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60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, PDFN5x6 package, designed for PWM, load switch, and power management applications requiring low on-resistance and fast switching. |
Original |
PDF
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RSR020N06TL
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC, suitable for battery switches and DC/DC converters. |
Original |
PDF
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79L06-TA
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JCET Group
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Three-terminal negative voltage regulator CJ79L06 with -6V output, 0.1A maximum output current, dropout voltage of 1.7V, input voltage up to -30V, and thermal resistance of 200°C/W in TO-92 package. |
Original |
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MPSA06-TA(RANGE:100-400)
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JCET Group
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NPN transistor in TO-92 package with collector-base and collector-emitter breakdown voltages of 80 V, emitter-base breakdown voltage of 4 V, continuous collector current of 0.5 A, and collector power dissipation of 625 mW. |
Original |
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SLF80P06T
