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05T-JWPF-HHLE-D
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JST Manufacturing
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Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING TAB JWPF 5POS 2MM |
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FM25F005-TS-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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512K-bit serial flash memory with 64KB addressable blocks, supports SPI and dual I/O modes, operates at 2.3V to 3.6V, features 100MHz fast read, software/hardware write protection, 64-bit unique ID, and OTP security sector. |
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SLV2305T
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Maplesemi
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P-Channel MOSFET with -20V drain-source voltage, -5A continuous drain current, 32mΩ typical RDS(on) at VGS = -4.5V, and low gate charge, housed in SOT-23 package. |
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SME12ABFR005T
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SATE
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SME Series metal foil current sensing resistors in chip sizes 0805 to 2512 offer resistance from 1 mΩ to 50 mΩ, low TCR down to ±50 ppm/°C, power ratings up to 3 W, and operate from -55°C to +170°C. |
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SMD12A1FR005T
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SATE
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SMD metal foil current sensing resistor with chip sizes from 0603 to 2512, resistance range 2 mΩ to 700 mΩ, low TCR, high power rating, and low inductance between 0.5 nH and 5 nH. |
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SLB_P3205T
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Maplesemi
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60V N-Channel MOSFET with 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, 100% avalanche tested, available in TO-263 and TO-220C packages. |
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SMA25A2FR005T
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SATE
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SMA Series 2512 metal strip current sensing resistor with resistance range 1 mΩ to 10 mΩ, 2W power rating, low inductance (0.5 nH to 5 nH), ±1% tolerance, and operating temperature from -55°C to +170°C. |
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SDA05T1
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Leiditech
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SDA05T1 unidirectional TVS diode with 5V operating voltage, SOD-523 package, nA level leakage current, 9.8V clamping voltage at 1A, and 200W peak pulse power for IEC 61000-4-2 ±30kV ESD protection. |
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SMA25A3FR005T
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SATE
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SMA Series 2512 metal strip current sensing resistor with resistance from 1 mΩ to 10 mΩ, 3W power rating, low inductance of 0.5nH to 5nH, TCR ±50 to ±100 ppm/°C, and operating temperature from -55°C to +170°C. |
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ESDA0905T6
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Leiditech
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Ultra low capacitance TVS diode array ESDA0905CT6 for quadri protection, 9V operating voltage, SOT-563 package, with 100W peak pulse power, ±15kV ESD immunity, and low clamping voltage. |
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SMF08MAFR005T
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SATE
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SMF Series current sensing resistor, metal foil type, chip sizes 0603 to 2512, resistance range 2 mΩ to 200 mΩ, low TCR, lead-free, RoHS compliant, suitable for high precision current sensing applications. |
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AK8205T
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AK Semiconductor
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AK8205T N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 5A continuous drain current, RDS(ON) less than 32mΩ at VGS=2.5V, available in SOT23-6L surface mount package. |
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SMF12M1JR005T
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SATE
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SMF Series current sensing resistor, metal foil type, chip sizes 0603 to 2512, resistance range 2 mΩ to 200 mΩ, low TCR, lead-free, RoHS compliant, suitable for high precision current sensing applications. |
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SK8205-T8
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Shikues Semiconductor
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S20 V, RDS(ON) 26mΩ at VGS=2.5V, 20mΩ at VGS=4.5V, ID 6.0A, suitable for Battery protection or Switching. |
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PIT5005T-01
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CT Micro International Corporation
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Slotted optical switch with 5.0mm gap, 0.5mm aperture, GaAs LED and silicon LOG IC output sensor, TTL/CMOS compatible, housed in opaque black plastic, RoHS compliant. |
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MM32SPIN05TW
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MindMotion Microelectronics
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32-bit MCU, ARM Cortex-M0, 72MHz, 12-bit ADC, comparator, 16/32-bit timers, I2C, 2xSPI, 2xUART, 2.0-5.5V, -40 to +105°C, multiple packages. |
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PIT5005T-02
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CT Micro International Corporation
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Phototransistor optical interrupter switch with 5mm gap, 0.5mm aperture, infrared LED and NPN silicon phototransistor in molded housing, designed for non-contact sensing and PCB mounting, RoHS compliant. |
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SLP3205T
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Maplesemi
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N-channel 60V 120A Power MOSFET with typical RDS(on) of 4.9 mΩ at VGS = 10 V, featuring low gate charge, fast switching, and 100% avalanche testing for reliable performance in load switch and PWM applications. |
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IRFR5305TRPBF
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VBsemi Electronics Co Ltd
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P-Channel 60 V MOSFET with 0.02 ohm RDS(on) at VGS = -10 V, 50 A continuous drain current, TO-252 package, suitable for load switch applications, RoHS compliant and halogen-free. |
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JEB05T2B
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Jiangsu JieJie Microelectronics Co Ltd
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480W peak pulse power TVS diode array in SOT-23 package, designed for bidirectional protection of two I/O lines, with 5V working voltage, low clamping voltage, and 90pF typical junction capacitance. |
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FM25F005-TS-T-G
