JMSL0406AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40 V N-channel Power MOSFET in TO-252-3L package with 4.5 mΩ typical RDS(ON) at 10 V VGS, 73 A continuous drain current, and low gate charge for power management applications. |
Original |
PDF
|
|
|
JMSH0406AGD
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V dual N-channel power MOSFET in PDFN5x6-8L-D package with 5.2 mΩ typical RDS(ON) at 10V VGS, 64A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
Original |
PDF
|
|
|
JMSH0406AU
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V 58A N-channel Power MOSFET in PDFN3x3-8L package with 4.3 mΩ RDS(ON) at 10V VGS, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
Original |
PDF
|
|
|
JMSH0406AKQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V N-channel Power MOSFET in TO-252-3L package with 5.0 mΩ typical RDS(ON) at 10V VGS, 73A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
JMSH0406AG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V N-channel Power MOSFET with 4.1 mΩ typical RDS(ON) at 10V VGS, 86A continuous drain current, PDFN5x6-8L package, suitable for power management and switching applications. |
Original |
PDF
|
|
|
JMSL0406AKQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40 V N-Ch Power MOSFET in TO-252-3L package with 4.7 mΩ RDS(ON) at VGS = 10V, 78 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
JMSH0406AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40 V N-channel Power MOSFET in TO-252-3L package with 5.0 mΩ RDS(ON) at 10 V VGS, 70 A continuous drain current, and low gate charge for power management and switching applications. |
Original |
PDF
|
|
|
JMSL0406AP
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V N-channel Power MOSFET in SOP-8L package with 4.8 mΩ typical RDS(ON) at 10V VGS, 17.8A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
Original |
PDF
|
|
|
JMSH0406AGDQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V dual N-channel power MOSFET with 5.2 mΩ typical RDS(ON) at VGS = 10V, 68A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PDFN5x6-8L-D package. |
Original |
PDF
|
|
|