|
04DB-4K
|
|
JST Manufacturing
|
Connector: Wire to Board Connector: HDR: 4: 2.5: IDT: THRU |
Original |
PDF
|
75.13KB |
2 |
|
04DB-4K(LF)
|
|
JST Manufacturing
|
Connector: Wire to Board Connector: HDR: 4: 2.5: IDT: THRU |
Original |
PDF
|
75.13KB |
2 |
|
04DB-6S
|
|
JST Manufacturing
|
Connector: Wire to Board Connector: HDR: 4: 2.5: IDT: THRU |
Original |
PDF
|
75.13KB |
2 |
|
04DB-6S(LF)
|
|
JST Manufacturing
|
Rectangular Connectors - Board In, Direct Wire to Board, Connectors, Interconnects, CONN IDC DB 4POS 2.5MM WHT PCB |
Original |
PDF
|
|
2 |
|
04DB-8M
|
|
JST Manufacturing
|
Connector: Wire to Board Connector: HDR: 4: 2.5: IDT: THRU |
Original |
PDF
|
75.13KB |
2 |
|
04DB-8M(LF)
|
|
JST Sales America
|
Connectors, Interconnects - Rectangular Connectors - Board In, Direct Wire to Board - CONN IDC DB 4POS 2.5MM GRN PCB |
Original |
PDF
|
329.19KB |
|
JMTP080N04D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V, 13A dual N-channel enhancement mode power MOSFET in SOP-8 package with RDS(ON) less than 10.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested. |
Original |
PDF
|
|
|
|
ULC0504D
|
|
Leiditech
|
ULC0504D is a low capacitance TVS diode array in SOT-26 package with 5V operating voltage, ultra-low leakage current of 0.1uA max, 9.8V clamping voltage at 1A, and 3pF typical capacitance, designed for ESD protection up to ±15kV air and ±8kV contact discharge. |
Original |
PDF
|
|
|
|
FM34C04D-DN-T-G
|
|
Shanghai Fudan Microelectronics Group Co Limited
|
4K-bit serial EEPROM with 128-bit UID and 16-byte security sector, organized as 512 x 8 bits, supports I2C Fast-Mode Plus up to 1MHz, operates from 1.7V to 3.6V, includes reversible software write protection for four 128-byte blocks. |
Original |
PDF
|
|
|
|
EEPROM-SL24C04D
|
|
SLKOR
|
PROM, 256/512/1024/2048/4096/8192×8-bit, 1.8V~5.5V, 1μA, 1mA, I2C 1 MHz (5V), 400 kHz (1.8V, 2.5V, 2.7V), 8-pin PDIP/SOP, RoHS. |
Original |
PDF
|
|
|
|
SF1004DS
|
|
Shandong Jingdao Microelectronics Co Ltd
|
10 A glass passivated super fast rectifier with reverse voltage from 100 to 600 V, low forward voltage drop, high surge current capability, and 35 ns maximum reverse recovery time, available in TO-251 and TO-252 packages. |
Original |
PDF
|
|
|
|
G604DS
|
|
AK Semiconductor
|
6A surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, low forward voltage drop, glass passivated junction, and operating temperature range of -55°C to +150°C.6A surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, low forward voltage drop, glass passivated junction, and operating temperature range of -55°C to +150°C.Surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100 to 1000 V, 6 A average forward current, 160 A surge current, low forward voltage drop of 1.1 V, and operating temperature range of -55 to +150 °C.Surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, 6A average forward current, 160A peak surge current, low forward voltage drop of 1.1V, and operating temperature range from -55°C to +150°C.6A surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, low forward voltage drop, glass passivated junction, and operating temperature range of -55°C to +150°C.6A surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, low forward voltage drop, glass passivated junction, and operating temperature range of -55°C to +150°C. |
Original |
PDF
|
|
|
|
JMTP230C04D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
N-Channel and P-Channel enhancement mode MOSFET in SOP-8 package, with 40V drain-source voltage, 8A continuous drain current for N-Channel, -6A for P-Channel, and low on-resistance of 22mΩ (N) and 53mΩ (P) at respective gate voltages. |
Original |
PDF
|
|
|
|
US804DS
|
|
AK Semiconductor
|
Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK) package, with reverse voltage ratings from 100V to 1000V, forward current up to 8A, low forward voltage drop, and reverse recovery time as low as 50ns. |
Original |
PDF
|
|
|
|
|
|
JMTG170C04D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V, ±16A, 18.5mΩ and 37.3mΩ N and P-channel Power Trench MOSFET in PDFN5x6-8L-D package with low gate charge and excellent RDS(ON), suitable for load switch, PWM, and power management applications. |
Original |
PDF
|
|
|
|
VS3604DT
|
|
VANGUARD
|
30V/300A N-Channel Power MOSFET in TO-220AB package with typical RDS(on) of 1.3 mΩ at VGS=10V, designed for high-efficiency power applications requiring low on-resistance and logic-level gate control. |
Original |
PDF
|
|
|
|
SZ504D
|
|
SUNMATE electronic Co., LTD
|
Surface mount silicon Zener diode in SMA/DO-214AC package, with 3.9 to 200 V voltage range, 3.0 W power dissipation at 75 °C, low leakage current, and high reliability for general-purpose regulation.Surface mount silicon Zener diode in SMA/DO-214AC package with 3.9 to 200 V voltage range, 3.0 W power dissipation at 75 °C, low leakage current, and operating junction temperature from -55 to +150 °C.Surface mount silicon Zener diode in SMA/DO-214AC package with 3.9 to 200 V zener voltage range, 3.0 W power dissipation at 75 °C lead temperature, and low leakage current.Surface mount silicon Zener diode in SMA/DO-214AC package, 3.9 to 200V range, 3.0W power dissipation at 75°C, low leakage current, high reliability, and reverse voltage tolerance options of ±5% or ±10%.Surface mount silicon Zener diode in SMA/DO-214AC package, with 3.9 to 200 V voltage range, 3.0 W power dissipation at 75 °C, low leakage current, and zener current up to 630 mA.Surface mount silicon Zener diode in SMA/DO-214AC package, with 3.9 to 200 V voltage range, 3.0 W power dissipation at 75 °C, low leakage current, and high reliability for general-purpose regulation.Surface mount silicon Zener diode in SMA/DO-214AC package, 3.9 to 200V range, 3.0W power dissipation at 75C lead temperature, operating junction temperature from -55 to +150C.Surface mount silicon Zener diode in SMA/DO-214AC package, with a power dissipation of 3.0 W at 75 °C lead temperature, operating voltage range from 3.9 V to 200 V, and junction temperature range from -55 to +150 °C. |
Original |
PDF
|
|
|
|
JMTC025N04D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V, 190A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 2.6mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency in power management applications. |
Original |
PDF
|
|
|
|
SZ404D
|
|
SUNMATE electronic Co., LTD
|
Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6V to 200V zener voltage range, low leakage current, and operating junction temperature from -55 to +150°C. |
Original |
PDF
|
|
|
|
FM24C04D-SO-T-G
|
|
Shanghai Fudan Microelectronics Group Co Limited
|
4K-bit 2-wire serial EEPROM with 128-bit unique ID and 16-byte security sector, organized as 512 x 8 bits, supports 1.7V to 5.5V operation, 400kHz or 1MHz I2C interface, and features write protection, page write, and self-timed write cycle. |
Original |
PDF
|
|
|
JMTP080N04D
