|
03XAF-2S
|
|
JST Manufacturing
|
Cconnector HOUSING XAF POS 2.5MM |
Original |
PDF
|
69.41KB |
|
|
03-XC2151
|
|
Torex Semiconductor
|
CMOS IC |
Original |
PDF
|
86.51KB |
1 |
NCE6003X
|
|
NCEPOWER
|
NCE6003X is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of less than 90mΩ at VGS=10V, suitable for battery protection and switching applications. |
Original |
PDF
|
|
|
SH367103X/016XY-AAE00
|
|
Sinowealth Electronic Ltd
|
3/4 series lithium battery pack protection IC with integrated N-MOSFET driver, 3V to 26V operating voltage, overcharge and overdischarge protection, dual discharge current monitoring, short circuit and temperature protection, and low power consumption down to 4uA in sleep mode. |
Original |
PDF
|
|
|
GD30DC1103X
|
|
GigaDevice Semiconductor (Beijing) Inc
|
2.5V-6.0V Input, 0.6V-VIN Output, 1A, 0.6V Ref, 200mΩ/150mΩ MOSFETs, 25uA, 1.6MHz, 0.7ms Soft-Start, OVP, OCP, SCP, OTP, RoHS. |
Original |
PDF
|
|
|
NCE6003XY
|
|
NCEPOWER
|
NCE6003XY is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of less than 78mΩ at VGS=10V, suitable for battery protection and switching applications. |
Original |
PDF
|
|
|
NCE6003XM
|
|
NCEPOWER
|
NCE6003XM is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 78mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications. |
Original |
PDF
|
|
|