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03N06CLE
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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03N06CLE
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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03N06CLESM
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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03N06CLESM9A
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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33.22KB |
1 |
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03N06L
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Goford Semiconductor
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N60V,RD(MAX)<100M@10V,RD(MAX)<12 |
Original |
PDF
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870.18KB |
6 |
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03N70P
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Advanced Power Technology
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
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82.63KB |
6 |
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03NB3
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Delta Electronics
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Original |
PDF
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1.26MB |
3 |
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03NB3M
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Delta Electronics
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Original |
PDF
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1.12MB |
2 |
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03NB3S
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Delta Electronics
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Original |
PDF
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1.26MB |
3 |
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03NB4
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Delta Electronics
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|
Original |
PDF
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1.26MB |
3 |
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03NB4M
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Delta Electronics
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|
Original |
PDF
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1.12MB |
2 |
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03NR
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JST Manufacturing
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Connector |
Scan |
PDF
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363.43KB |
2 |
CESD0603NC5VU
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CREATEK Microelectronics
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ESD protection diode in DFN0603 package with 95W peak pulse power, 5V reverse stand-off voltage, 8A peak pulse current, 15pF typical junction capacitance, and low clamping voltage for one-line protection. |
Original |
PDF
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G15-03N-23
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Wenzhou Gangyuan Electronics Co Ltd
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Microswitch with operating temperature range -25°C to +70°C, rated 3A 125V AC, contact resistance ≤100mΩ, insulation resistance ≥100MΩ, dielectric strength 1000V AC 1min, mechanical life 10000 cycles. |
Original |
PDF
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HSL03N20
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Huashuo Semiconductor
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N-Ch 200V Fast Switching MOSFET with 0.6 ohm typical RDS(ON), 1.5A continuous drain current, low gate charge, and high cell density trench technology for small power switching applications. |
Original |
PDF
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JMSH1003NE
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 3.0mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages with 213A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and motor driving applications. |
Original |
PDF
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JMSH1003NG
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 3.1mΩ N-channel Power MOSFET in PDFN5x6-8L package with 159A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, DC/DC conversion, and motor driving applications. |
Original |
PDF
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SK03N150-T7
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Shikues Semiconductor
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1500V N-ch, RoHS Compliant, RDS(ON)=5.4Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, TO-247. |
Original |
PDF
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CJA03N10
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JCET Group
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N-channel MOSFET CJA03N10 in SOT-89-3L package, featuring 100V drain-source voltage, 3A continuous drain current, 140mΩ typical RDS(on) at 10V VGS, and low gate charge for power switching applications. |
Original |
PDF
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CESD0603NC36VB
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CREATEK Microelectronics
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Bidirectional ESD protection diode in DFN0603 package with 160W peak pulse power, 36V reverse stand-off voltage, 6.5pF typical junction capacitance, and IEC 61000-4-2 ±20kV protection. |
Original |
PDF
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CESD0603NC5VU
